Improving the optoelectronic properties of single-crystalline antimony sulfide rods through simultaneous defect suppression and surface cleaning

Abstract

Low-dimensional semiconductors can be used for fabrication of various optoelectronic devices due to their fascinating structures and physical properties. Herein, one-dimensional single-crystal antimony sulfide (Sb2S3) rods with tunable lengths/diameters were...

2D/1D PbI2/Sb2S3 van der Waals heterojunction for highly sensitive and broadband photodetectors

“…36 For Sb 2 S 3 microrods, its optical bandgap ( E g,opt ) can be determined to be ∼1.61 eV as reported in our recent work. 18…”

“…The corresponding I–t and rise-decay curves for PbI 2 nanosheet device (Fig. S12, ESI†) and Sb 2 S 3 microrod 18 devices were tested/retrieved for comparison. The results reveal that the individual devices respond slightly faster than the heterojunction devices.…”

“…Sb 2 S 3 microrods were synthesized by a hydrothermal reaction using SbCl 3 and Na 2 S 2 O 3 ·5H 2 O as Sb and S sources, respectively, followed by post-thermal treatment, 18 as schematically illustrated in Fig. S1b (ESI†).…”

“…However, our recent work reveals that impurities can residue on the surface of 1D Sb 2 S 3 prepared by traditional hydrothermal reaction and affect its optoelectronic property, highlighting the importance of suitable post-treatment. 18…”

CuInS2/Red Phosphorus Nanosheet Interleaved Heterostructures with Improved Interfacial Charge Transfer for Photoelectrochemical Aptasensing

“…Photoelectrochemical (PEC) analyses have garnered significant attention due to their advantages of low cost, simple operation, fast response time, and high sensitivity. , However, technological advancements in PEC technology have highlighted deficiencies in the use of visible light, poor electron–hole transfer efficiency, and insufficient photoelectric conversion efficiency in current photovoltaic materials. These issues pose fundamental challenges that restrict the performance of PEC sensors, significantly impacting their sensitivity and detection thresholds. , Modulating the morphological structure, including surface defects, , vacancies, , and dimensions, , can enhance the light utilization and improve the carrier migration rate at the interface . Furthermore, constructing a heterojunction can alter the transport path of photogenerated electron–hole pairs, enhancing carrier separation efficiency. − Although these approaches can enhance the photoelectric activity of materials, few studies have investigated the combination of morphology modulation and heterojunction construction.…”