Post Cu CMP Cleaning of Polyurethane Pad Debris

Tseng, Wei–Tsu; Rill, Elliott; Backes, Benjamin; Chace, Milton A.; Yao, Yiping; DeHaven, Patrick W.; Ticknor, Adam; Devarapalli, Vamsi; Khojasteh, Mahmoud; Steber, David; Economikos, Laertis; Truong, Connie; Majors, Christopher

doi:10.1149/2.006401jss

Cited by 15 publications

(3 citation statements)

References 9 publications

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“…This pad debris is known as a source of micro-scratches, and it should be completely removed during cleaning. Both hybrid clean (i.e., acidic plus alkaline cleans) and alkaline-clean processes are effective in removing pad debris from the wafer surfaces by the electrostatic repulsion between them in the alkaline medium [45].…”

Section: Organic Residues and Pad Debrismentioning

confidence: 99%

Chemical Mechanical Planarization-Related to Contaminants: Their Sources and Characteristics

Seo¹

2021

Emerging Contaminants

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Chemical mechanical planarization (CMP) process has been widely used to planarize a variety of materials including dielectrics, metal, and semiconductors in Si-based semiconductor devices. It is one of the most critical steps to achieve the nanolevel wafer and die scale planarity. However, various contaminants are observed on the wafer surfaces after the CMP process, and they become the most critical yield detractor over many generations of rapidly diminishing feature sizes because they have the most direct impacts on device performance and reliability. This book chapter provides (1) CMP consumables-induced contaminants such as residual particles, surface residues, organic residues, pad debris and metallic impurities, pad contamination, watermark, etc., (2) brush-induced cross-contamination during post CMP cleaning, (3) post-CMP cleaning for removing these contaminants. Fundamental understanding of the formation of various types of CMP contaminants and their characteristics will significantly benefit the development of next-generation CMP slurries and post-CMP cleaning solutions.

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Section: Organic Residues and Pad Debrismentioning

confidence: 99%

Chemical Mechanical Planarization-Related to Contaminants: Their Sources and Characteristics

Seo¹

2021

Emerging Contaminants

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“…The integration of copper into an IC manufacturing process can be implemented by using the dual damascene technique, in which chemical mechanical planarization (CMP) has become an essential step that makes the integration of copper as interconnect metal feasible OE6 14 . However, the CMP process also leaves lots of residual contaminants such as organic residues, abrasive particles and metallic contaminants on the copper surface that can degrade the electrical properties of ICs, lower the conductivity of Cu and lead to poor adhesion of the subsequent layers OE15; 16 . Organic residues may be the primary source of defects and mainly originate from benzotriazole (BTA), often used as an inhibitor to achieve good surface planarization because of the formation of non-soluble BTA complexes OE17 20 .…”

Section: Introductionmentioning

confidence: 99%

Synergetic effect of chelating agent and nonionic surfactant for benzotriazole removal on post Cu-CMP cleaning

Li¹,

Liu²,

Wang³

et al. 2016

J. Semicond.

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The cleaning of copper interconnects after chemical mechanical planarization (CMP) process is a critical step in integrated circuits (ICs) fabrication. Benzotriazole (BTA), which is used as corrosion inhibitor in the copper CMP slurry, is the primary source for the formation of organic contaminants. The presence of BTA can degrade the electrical properties and reliability of ICs which needs to be removed by using an effective cleaning solution. In this paper, an alkaline cleaning solution was proposed. The alkaline cleaning solution studied in this work consists of a chelating agent and a nonionic surfactant. The removal of BTA was characterized by contact angle measurements and potentiodynamic polarization studies. The cleaning properties of the proposed cleaning solution on a 300 mm copper patterned wafer were also quantified, total defect counts after cleaning was studied, scanning electron microscopy (SEM) review was used to identify types of BTA to confirm the ability of cleaning solution for BTA removal. All the results reveal that the chelating agent can effectively remove the BTA residual, nonionic surfactant can further improve the performance.

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“…[1][2][3][4] However, the process leaves a large amount of defects on the wafer surface, such as organic contaminations, particles, scratch, corrosion, damage, copper oxide, etc. [5][6][7][8] Among these defects, once particles are adsorbed on wafer surface, it is difficult to remove them during cleaning process, 9 which may cause device failure. [10][11][12][13][14][15] Recently, several researchers have focused on the issue of particle removal.…”

mentioning

confidence: 99%

Role of Penetrating Agent on Colloidal Silica Particle Removal during Post Cu CMP Cleaning

Yang

Liu

Wang

et al. 2018

ECS J. Solid State Sci. Technol.

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The cleaning of copper surface after chemical mechanical planarization (CMP) is a critical step in integrated circuits (ICs) fabrication. Because the copper surface would be contaminated by particles, such as silica abrasives, which may cause device failure. The purpose of this work is to propose a kind of penetrating agent for particle removal. The cleaning solution consisted of FA/O II as a chelating agent and primary alcobol ethoxylate (PAE) as a penetrating agent. The removal of particles was characterized using scanning electron microscope (SEM). The wettability of the cleaning solutions as a function of PAE concentration was quantified using contact angle measurements. The effect of PAE on surface tension was also studied. The surface quality of copper after cleaning was monitored using atomic force microscope (AFM) measurements. The test results showed that PAE can reduce the surface tension of cleaning solutions and contact angle on surface. SEM results showed that PAE could effectively remove the silica particles and a lower surface roughness was obtained after cleaning. The cleaning performance on copper patterned wafers also showed that PAE could reduce defect count effectively.

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Post Cu CMP Cleaning of Polyurethane Pad Debris

Cited by 15 publications

References 9 publications

Chemical Mechanical Planarization-Related to Contaminants: Their Sources and Characteristics

Chemical Mechanical Planarization-Related to Contaminants: Their Sources and Characteristics

Synergetic effect of chelating agent and nonionic surfactant for benzotriazole removal on post Cu-CMP cleaning

Role of Penetrating Agent on Colloidal Silica Particle Removal during Post Cu CMP Cleaning

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