Post-breakdown leakage resistance and its dependence on device area

Chen, Tze Wee; Ito, C.; Loh, W.M.; Dutton, R.W.

doi:10.1016/j.microrel.2006.07.044

Cited by 5 publications

(5 citation statements)

References 18 publications

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“…This point lies on same line as the post-breakdown leakage resistances induced by a voltage ramp. This observation is also consistent with [7], in which it is reported that the post-breakdown leakage resistances induced by a voltage ramp and a 740ps pulse are similar. Note that…”

Section: A4-3supporting

confidence: 92%

“…The stable leakage resistance after SBD explains why logic cells can function correctly after breakdown events. The gate oxide area-dependent, stable leakage resistance after HBD is as predicted by the model proposed in [7].…”

Section: Discussionmentioning

confidence: 99%

“…The DC gate leakage current was measured with 0.1V, and another three pulses were applied at a higher voltage. This procedure is repeated until the gate oxide is completely broken-down to a stable low resistance [7]. The gate leakage current was measured with 0.1V DC so that there is no additional damage to the gate oxide while the leakage current is measured.…”

Section: A4-3mentioning

confidence: 99%

“…A 0-5V voltage ramp was used to stress the gate while all the other terminals were grounded. The post-breakdown leakage resistance was then measured [7]. Fig.…”

Section: A4-3mentioning

confidence: 99%

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Gate oxide reliability characterization in the 100ps regime with ultra-fast transmission line pulsing system

Chen

Ito²,

Maloney

et al. 2007

2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)

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Section: A4-3supporting

confidence: 92%

Section: Discussionmentioning

confidence: 99%

Section: A4-3mentioning

confidence: 99%

“…A 0-5V voltage ramp was used to stress the gate while all the other terminals were grounded. The post-breakdown leakage resistance was then measured [7]. Fig.…”

Section: A4-3mentioning

confidence: 99%

See 2 more Smart Citations

Gate oxide reliability characterization in the 100ps regime with ultra-fast transmission line pulsing system

Chen

Ito²,

Maloney

et al. 2007

2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)

Self Cite

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“…Classical TDDB experiments are based on direct-current (DC) measurements that allow for monitoring the increase of I G as electrical stress is applied to the device's terminals [11][12][13][14]. Actually, there exist two main transistor states during which stress is applied: (i) while biased in the inversion region, and (ii) in channel depletion conditions.…”

Section: Introductionmentioning

confidence: 99%

RC-Effects on the Oxide of SOI MOSFET under Off-State TDDB Degradation: RF Characterization and Modeling

Otero-Carrascal,

Chaparro-Ortiz,

Srinivasan

et al. 2024

Micromachines

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Based on S-parameter measurements, the effect of dynamic trapping and de-trapping of charge in the gate oxide, the increase of dielectric loss due to polarization, and the impact of leakage current on the small-signal input impedance at RF is analyzed and represented. This is achieved by systematically extracting the corresponding model parameters from single device measurements at different frequency ranges, and then the methodology is applied to analyze the evolution of these parameters when the device is submitted to non-conducting electrical stress. This approach not only allows to inspect the impact of effects not occurring under DC conditions, such as the current due to the time varying dielectric polarization, but also to clearly distinguish effects in accordance with the functional form of their contribution to the device’s impedance. In fact, it is shown that minor changes in the model of the gate capacitance by including additional resistive and capacitive components allows for an excellent model-experiment correlation up to 30 GHz. Moreover, the accuracy of the correlation is shown to be maintained when applying the proposal to the device under different gate-to-source bias conditions and at several stages during off-state degradation.

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