A Monte Carlo computer technique has been used to calculate nonequilibrium electron transport properties of n-type GaAs and InP at 77 and 300 K, with and without impurity scattering. Characteristics of the electron transient, including velocity overshoot, are presented and analyzed in terms of energy and momentum relaxation times. New information about the steady-state transport properties of InP and about the electron temperatures of GaAs and InP as functions of electric field is also presented and discussed.

Abstract-Conventional ESD guidelines dictate a large protection device close to the pad. The resulting capacitive load causes a severe impedance mismatch and bandwidth degradation. A distributed ESD protection scheme is proposed to enable a low-loss impedance-matched transition from the package to the chip. A simple resistive model adequately predicts the ESD behavior under stress according to the charged device and human body models. The large area of the distributed ESD scheme would limit its application to designs such as distributed amplifiers, rf transceivers, A/D converters, and serial links with only a few dedicated high-speed interfaces. The distributed ESD protection is compatible with high-speed layout guidelines, requiring only low-loss transmission lines in addition to a conventional ESD device.

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