Possibility of Growing High Quality Very Thin Single CdTe Crystals Directly on Mica

Abstract

A diagnostic technique for the determination of pressure, temperature and its radial distribution, the strength of the electric field and the current of a wall-stabilized pulse hydrogen arc at a pressure of 10 atin and a maximum power of 120 kW/ cm arc length is developed.

Epitaxial growth of II–VI semiconductor CdTe on a layered material NbSe2

“…5 shows the PL spectra of the CdTe films grown on NbSe 2 by (a) the standard MBE and (b) the two-step growth method. In the spectra, a sharp emission line at 1.597 eV was due to the excitonic emission and a broad line at 1.55 eV were assigned to the emission from donor-acceptor pairs (DAP) involving Cd and/or Te vacancies and a broad line around 1.43 -1.48 eV was associated with volume and surface defects, respectively [8,9]. The sharp and relatively intense excitonic emission in both the spectra demonstrated good optical qualities of the grown films.…”