Epitaxial growth of II–VI semiconductor CdTe on a layered material NbSe2

Kuroda, Shinji; Minami, Kôhei; Takita, K.

doi:10.1016/j.jcrysgro.2003.10.048

Cited by 9 publications

(8 citation statements)

References 11 publications

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“…However, attempts have been made to grow CdTe on NbSe 2 substrates. 119 Depositing NbSe 2 onto CdTe led to similar dipole formation issues as was reported for VSe 2 on CdTe. Gao et al (2014) 120 deposited VSe 2 by electron beam evaporation onto CdTe device structures with a copper-free process.…”

Section: Selenide Back Contactssupporting

confidence: 53%

Back contacts materials used in thin film CdTe solar cells—A review

Hall

Lamb

Irvine

2021

Energy Science & Engineering

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Section: Selenide Back Contactssupporting

confidence: 53%

Back contacts materials used in thin film CdTe solar cells—A review

Hall

Lamb

Irvine

2021

Energy Science & Engineering

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“…As clusters grow larger, their rotation becomes less likely, as our calculation shows a much larger barrier of 0.39 eV/cluster when the size is at 19R. This is indeed what was observed by experimental XRD pole figure measurements [16,17] showing a significantly larger FWHM for CdTe-on-G (~14°) than that for CdTe-on-NbSe2 (~5°).…”

supporting

confidence: 87%

“…In contrast, a significantly smaller FWHM around 5° was found for CdTe-on-NbSe2 [17]. This noticeable difference here is quite surprising because, judged from interlayer binding of the layered structures, both NbSe2 and graphene are typical vdW materials [18].…”

mentioning

confidence: 59%

Enhanced van der Waals epitaxy via electron transfer enabled interfacial dative bond formation

Xie

Wang

et al. 2017

Phys. Rev. Materials

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Enhanced van der Waals (vdW) epitaxy of semiconductors on layered vdW substrate is identified as the formation of dative bonds. For example, despite that NbSe2 is a vdW layered material, firstprinciples calculations reveal that the bond strength at CdTe-NbSe2 interface is five times as large as that of vdW interaction at CdTe-graphene interface. The unconventional chemistry here is enabled by an effective net electron transfer from Cd dangling-bond states at CdTe surface to metallic non-bonding NbSe2 states, which is a necessary condition to activate the Cd for enhanced binding with Se.

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“…As far back as the 1960s, researchers used tape and other mechanical methods to cleave off the top of layered crystals for surface studies. − However, these techniques have not been transferred to relevant chemical systems for modern-day applications. One such application is the field of van der Waals epitaxy, which attempts to harness the weakly bonded surfaces of 2D materials to act as buffer layers and relieve lattice mismatch. − van der Waals epitaxy has been performed with a variety of materials − and is relevant in a wide range of fields, including work in photovoltaics such as the recent success by Kim et al in the epitaxial growth of GaAs on GaAs with a monolayer graphene buffer layer . However, these successes in van der Waals epitaxy are often performed on either 2D flakes or substrates grown by chemical vapor transport with small surface areas.…”

Section: Introductionmentioning

confidence: 99%

Large Area Atomically Flat Surfaces via Exfoliation of Bulk Bi₂Se₃ Single Crystals

et al. 2017

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In this work, we present an exfoliation method that produces cm2-area atomically flat surfaces from bulk layered single crystals, with broad applications such as for the formation of lateral heterostructures and for use as substrates for van der Waals epitaxy. Single crystals of Bi2Se3 were grown using the Bridgman method and examined with X-ray reciprocal space maps, Auger spectroscopy, low-energy electron diffraction, and X-ray photoelectron spectroscopy. An indium-bonding exfoliation technique was developed that produces multiple ∼100 μm thick atomically flat, macroscopic (>1 cm2) slabs from each Bi2Se3 source crystal. Two-dimensional X-ray diffraction and reciprocal space maps confirm the high crystalline quality of the exfoliated surfaces. Atomic force microscopy reveals that the exfoliated surfaces have an average root-mean-square (RMS) roughness of ∼0.04 nm across 400 μm2 scans and an average terrace width of 70 μm between step edges. First-principles calculations reveal exfoliation energies of Bi2Se3 and a number of other layered compounds, which demonstrate relevance of our method across the field of 2D materials. While many potential applications exist, excellent lattice matching with the III–V alloy space suggests immediate potential for the use of these exfoliated layered materials as epitaxial substrates for photovoltaic development.

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Epitaxial growth of II–VI semiconductor CdTe on a layered material NbSe2

Cited by 9 publications

References 11 publications

Back contacts materials used in thin film CdTe solar cells—A review

Back contacts materials used in thin film CdTe solar cells—A review

Enhanced van der Waals epitaxy via electron transfer enabled interfacial dative bond formation

Large Area Atomically Flat Surfaces via Exfoliation of Bulk Bi₂Se₃ Single Crystals

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Epitaxial growth of II–VI semiconductor CdTe on a layered material NbSe2

Cited by 9 publications

References 11 publications

Back contacts materials used in thin film CdTe solar cells—A review

Back contacts materials used in thin film CdTe solar cells—A review

Enhanced van der Waals epitaxy via electron transfer enabled interfacial dative bond formation

Large Area Atomically Flat Surfaces via Exfoliation of Bulk Bi2Se3 Single Crystals

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Product

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Large Area Atomically Flat Surfaces via Exfoliation of Bulk Bi₂Se₃ Single Crystals