Potential inhibitors of a target biomolecule, NAD-dependent deacetylase Sirtuin 1, were identified by a contest-based approach, in which participants were asked to propose a prioritized list of 400 compounds from a designated compound library containing 2.5 million compounds using in silico methods and scoring. Our aim was to identify target enzyme inhibitors and to benchmark computer-aided drug discovery methods under the same experimental conditions. Collecting compound lists derived from various methods is advantageous for aggregating compounds with structurally diversified properties compared with the use of a single method. The inhibitory action on Sirtuin 1 of approximately half of the proposed compounds was experimentally accessed. Ultimately, seven structurally diverse compounds were identified.
The oxidation characteristics of Al and Al–Ta alloy films (500 Å) deposited as a passivation layer on Cu have been examined by depth profiling using Auger electron spectroscopy and X-ray photoelectron spectroscopy. Although alloying between Al and Cu takes place, the Al films prevent the oxidation of Cu up to the oxidation temperature of ∼300° C for 1 h in air, at which the surface-oxidized Al2O3 layer maintains the self-passivating ability. At more elevated oxidation temperatures, the further oxidation of Al and the formation of CuO in the Al–Cu alloy layer just beneath the oxide layer are confirmed to occur. On the contrary, the Al–Ta alloy films completely protect the Cu layer from oxidation even after oxidation at 500° C for 1 h in air. This is achieved due to the formation of the Ta buffer layer which separates the Cu layer from the surface-oxidized one, which is formed by the preferential oxidation of Al and the rejection of Cu from the Al2O3 during the oxidation.
The oxidation behavior of Ta films (500 Å) deposited on Cu as a passivation layer to protect Cu from oxidation has been examined. In the present Ta thin films on Cu, the kinetics of oxidation agree well with one reported in the larger thickness range. Although the outdiffusion of a small amount of Cu through the Ta layer is observed, the Ta layer is effective as a passivation layer during oxidation at 450° C for 1 h, where the entire Ta layer is completely oxidized.
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