Possibility of Forming 18-nm-Pitch Ultrahigh Density Fine Dot Arrays for 2 Tbit/in.²Patterned Media Using 30-keV Electron Beam Lithography

Abstract

We studied the possibility of forming ultrahigh-density fine dot arrays using 30-keV electron beam (EB) drawing for 2 Tbit/in.2 patterned media. We investigated the effects of calixarene resist thickness and exposure dosage on the drawing of dot arrays with a minimum pitch. We found that the 13-nm-thick calixarene resist was very suitable for forming resist dot arrays with a pitch of 20 nm. Furthermore, the allowable region of proper exposure dosage became narrow as the pitch decreased. It is clarified that there exists a minimum pitch of 18 nm in drawing ultrahigh density fine dot arrays with a 13-nm-thick resist.

Electron Beam Lithography Using Highly Sensitive Negative Type of Plant-Based Resist Material Derived from Biomass on Hardmask Layer

“…Electron beam (EB) lithography has great potential for the future production of lithographic masks, nanoimprint templates, light-emitting diodes, solar cell devices, actuators, biosensors, and micro-electro-mechanical systems (MEMS), where continued success ultimately requires improvements in current processing technologies. [1][2][3][4] In EB lithography, the accuracy and reliability of a patterned resist material play important roles in the electronic device performances. 5,6) The basic property of EB lithography using a novel highsensitive negative type of plant-based resist material with glucose and dextrin derived from biomass on a hardmask layer was first proposed and evaluated in this study.…”

Formation of 7-nm-wide Line&Spaces in Half Pitch by 3 Dimensional Self-assembly of Nano-dots Using Sphere Type PS-PDMS

“…The guide line pattern was used with 2 parallel lines. The EB drawing was done with 30 keV high resolution SEM system [11], [12].…”

Development of Functional Metallic Glassy Materials by FIB and Nanoimprint Technologies

“…Conventional electron beam lithography is often used for fabricating molds with ultrafine nanodot arrays. This method produces highly accurate dot arrays of L p = 18 nm on resist [53]. However, it is difficult to transfer the pattern to mold materials such as Si and SiO 2 because of the low etching stability on resist materials [54].…”