Although synaptic behaviours of memristors have been widely demonstrated, implementation of an even simple artificial neural network is still a great challenge. In this work, we demonstrate the associative memory on the basis of a memristive Hopfield network. Different patterns can be stored into the memristive Hopfield network by tuning the resistance of the memristors, and the pre-stored patterns can be successfully retrieved directly or through some associative intermediate states, being analogous to the associative memory behaviour. Both single-associative memory and multi-associative memories can be realized with the memristive Hopfield network.
We study the paired-pulse-induced response of a NiO x -based memristor. The behavior of the memristor is surprisingly similar to the paired-pulse facilitation of a biological synapse. When the memristor is stimulated with a pair of electrical pulses, the current of the memristor induced by the second pulse is larger than that by the first pulse. In addition, the magnitude of the facilitation decreases with the pulse interval, while it increases with the pulse magnitude or pulse width.
In this study, sputtered undoped and nitrogen doped Sb 2 Te 3 ͑ST and STN͒ films were systematically investigated by x-ray diffraction ͑XRD͒ and resistance measurements. Their application to lateral phase-change memory ͑PCM͒ is presented as well. The STN film sputtered at a flow rate ratio ͑N 2 /Ar͒ of 0.07 proved to have both high stability and low power consumption, implying its high performance in PCM applications. In the STN films ͑N 2 /ArϾ 0.15͒, the hexagonal Te phase first appeared at 160°C, and then the orthorhombic SbN phase appeared at 290°C. The phase separation made it very difficult for these films to switch reversibly between the crystalline and the amorphous phase.
Phase change memory (PCM), which exploits the phase change behavior of chalcogenide materials, affords tremendous advantages over conventional solid-state memory due to its nonvolatility, high speed, and scalability. However, high power consumption of PCM poses a critical challenge and has been the most significant obstacle to its widespread commercialization. Here, we present a novel approach based on the self-assembly of a block copolymer (BCP) to form a thin nanostructured SiOx layer that locally blocks the contact between a heater electrode and a phase change material. The writing current is decreased 5-fold (corresponding to a power reduction by 1/20) as the occupying area fraction of SiOx nanostructures is increased from a fill factor of 9.1% to 63.6%. Simulation results theoretically explain the current reduction mechanism by localized switching of BCP-blocked phase change materials.
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