Positron Annihilation in IR Transmitting GeS₂-Ga₂S₃ Glasses

Abstract

Positron annihilation lifetime spectroscopy combined with Doppler broadening of annihilation radiation was applied to study free-volume entities in GeS2-Ga2S3glasses affected by Ga additions. It is shown that Ga-related void sub-system plays a decisive role in positron trapping process, while the overall density variation is defined mainly by Ge-related sub-system. These results serve as basis for new characterization route for inner free-volume structure of these glasses.

Free‐Volume Extended Defects in Structurally Modified Ge–Ga–S/Se Glasses

“…Thus, the grouped points of double measurements on the correlation dependence of S-W parameters are on one line from the 80GeS 2 -20Ga 2 S 3 to 82GeS 2 -18Ga 2 S 3 and up to 84GeS 2 -16Ga 2 S 3 composition in the direction of decrease of S parameter and increase of W parameter. Such behavior corresponds to a so-called abnormal tendency in the κ d -ρ correlation, [41] when all defect-related components, corresponding trapping parameters and densities exhibit obvious deviations, which can be ascribed to some changes in the defect environment.…”

“…Such behavior corresponds to a so‐called abnormal tendency in the κ d – ρ correlation, [ 41 ] when all defect‐related components, corresponding trapping parameters and densities exhibit obvious deviations, which can be ascribed to some changes in the defect environment.…”

“…Isotope 22 Na of slow activity (≈50 kBq) was used as source of positrons (prepared from of 22 NaCl, wrapped with Kapton foil (DuPontTM, Circleville, OH) of 12 μm thickness and sealed), which was sandwiched between two identical tested samples. [ 40,41 ]…”

“…The PAL study of ChG in the Ge–Ga–S/Se–CsCl systems exposed by additional influence and changes of compositions were investigated in this work using two‐ and three‐component fitting procedure of decomposition of PAL spectra. [ 37–41 ] In addition, we studied the influences of thermal annealing and composition of Ge–Ga–S/Se glasses on their microstructural properties, phase composition, and optical properties. [ 40,41 ] The goal of this work is to study the evolution of defect‐related extended free volumes in the 80GeSe 2 –20Ga 2 Se 3 ChG caused by thermal annealing as well as in the GeS 2 –Ga 2 S 3 glasses with different amount of GeS 2 and GaS 3 (80GeS 2 –20Ga 2 S 3 , 82GeS 2 –18Ga 2 S 3 , 84GeS 2 –16Ga 2 S 3 glasses) using combined PAL and DBAR measuring tools.…”

“…[35,36] The PAL study of ChG in the Ge-Ga-S/Se-CsCl systems exposed by additional influence and changes of compositions were investigated in this work using two-and three-component fitting procedure of decomposition of PAL spectra. [37][38][39][40][41] In addition, we studied the influences of thermal annealing and composition of Ge-Ga-S/Se glasses on their microstructural properties, phase composition, and optical properties. [40,41] The goal of this work is to study the evolution of defect-related extended free volumes in the 80GeSe 2 -20Ga 2 Se 3 ChG caused by thermal annealing as well as in the GeS 2 -Ga 2 S 3 glasses with different amount of GeS 2 and GaS 3 (80GeS 2 -20Ga 2 S 3 , 82GeS 2 -18Ga 2 S 3 , 84GeS 2 -16Ga 2 S 3 glasses) using combined PAL and DBAR measuring tools.…”