Free‐Volume Extended Defects in Structurally Modified Ge–Ga–S/Se Glasses

Klym, Halyna; Calvez, Laurent; Попов, А. И.

doi:10.1002/pssb.202100472

Cited by 5 publications

(9 citation statements)

References 48 publications

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“…Finally, it should be noted that in recent years, the research and development of various combinations of glass, polymer, and nanoparticle compositions for radiation protection has become a highly topical, and as a result, many different glass combinations have been successfully synthesized and evaluated [ 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 , 50 , 51 , 52 , 53 , 54 , 55 , 56 , 57 , 58 ].…”

Section: Resultsmentioning

confidence: 99%

Investigation of the Efficiency of Shielding Gamma and Electron Radiation Using Glasses Based on TeO2-WO3-Bi2O3-MoO3-SiO to Protect Electronic Circuits from the Negative Effects of Ionizing Radiation

et al. 2022

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This article considers the effect of MoO3 and SiO additives in telluride glasses on the shielding characteristics and protection of electronic microcircuits operating under conditions of increased radiation background or cosmic radiation. MoO3 and SiO dopants were chosen because their properties, including their insulating characteristics, make it possible to avoid breakdown processes caused by radiation damage. The relevance of the study consists in the proposed method of using protective glasses to protect the most important components of electronic circuits from the negative effects of ionizing radiation, which can cause failures or lead to destabilization of the electronics. Evaluation of the shielding efficiency of gamma and electron radiation was carried out using a standard method for determining the change in the threshold voltage (∆U) value of microcircuits placed behind the shield and subjected to irradiation with various doses. It was established that an increase in the content of MoO3 and SiO in the glass structure led to an increase of up to 90% in the gamma radiation shielding efficiency, while maintaining the stability of microcircuit performance under prolonged exposure to ionizing radiation. The results obtained allow us to conclude that the use of protective glasses based on TeO2–WO3–Bi2O3–MoO3–SiO is highly promising for creating local protection for the main components of microcircuits and semiconductor devices operating under conditions of increased background radiation or cosmic radiation.

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Section: Resultsmentioning

confidence: 99%

Investigation of the Efficiency of Shielding Gamma and Electron Radiation Using Glasses Based on TeO2-WO3-Bi2O3-MoO3-SiO to Protect Electronic Circuits from the Negative Effects of Ionizing Radiation

et al. 2022

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“…The study of modification of free-volume defects in glasses caused by introduction of different amounts of CsCl into the initial matrix was carried by PAL method [35][36][37][38][39]. Experimental PAL spectra were obtained using the ORTEC system with a resolution of 230 ps at temperature of 22 °C and relative humidity of 35%, provided by a special installation [35][36][37][38][39]. Two identical glass samples were placed on both sides of the positron source (isotope 22 Na with an activity of * 50 kBq).…”

Section: Methodsmentioning

confidence: 99%

“…In our previous research, we studied changes in the structure of the free volume of Ge-Ga-Se/S chalcogenide glass under the influence of thermal treatment [35,36], changes in matrix components [37,38], etc. For the analysis of PAL spectra, decomposition into two or three components was used.…”

Section: Introductionmentioning

confidence: 99%

Modification of free-volume defects in the GaS2–Ga2S3–CsCl glasses

Klym

Calvez

Попов

2023

J Mater Sci: Mater Electron

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Modification of free-volume positron trapping defects in the GaS 2 -Ga 2 S 3 -CsCl chalcogenide glasses was studied using positron annihilation lifetime spectroscopy and Doppler broadening of annihilation radiation methods. It is shown that the addition of CsCl to the main glass matrix leads to agglomeration of internal free-volume defects, which are di-or tri-atomic vacancies. However, an excessive amount of CsCl component causes a decrease in the size and content of these defects in the internal structure of the glass against the background of water adsorption in nanovoids with a radius of 0.3 nm. The obtained results are confirmed by normal and abnormal trends in the correlation of the S parameter, which characterizes the annihilation of positrons with low-momentum valence electrons and the W parameter, which corresponds to the annihilation of positrons with high-momentum core electrons.

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“…The group led by H. Klym applied the positron annihilation lifetime spectroscopy to studies of the evolution of defect-related extended free volumes in chalcogenide glasses, [10] MgAl 2 O 4 ceramics, [11] and BaGa 2 O 4 ceramics doped with Eu 3þ ions. [12] DOI: 10.1002/pssb.202200283 Agglomeration of free volumes in the initial stage of annealing with further fragmentation and shrinkage has been observed in the glasses.…”

Section: Positron Annihilation Spectroscopymentioning

confidence: 99%