Positive magnetoresistance in the variable range hopping regime in CdSe

Stydy of variable range hopping conduction in insulating n-type InSb semiconductor at very low temperature

“…Another manifestation of the CG, a crossover from Mott to ES regime upon lowering temperature has also been observed in several materials near the MIT [14][15][16]. In previous paper [17,18], we have found the Mott VRH regime in metallic n-type InP and insulating CdSe with exponent p in Equation (1) …”

Hopping conduction in amorphous silicon-chromium films at very low temperature

“…Whereas, the value n=2 means that the DOS varies in the vicinity of the Fermi level and p=0.5, corresponding to ES VRH with creation of CG (Equation (2)). Both VRH regimes have been widely shown in several materials [5][6][7][8][9][10].…”

“…It has been invoked to explain the conduction in several compounds, such as, semiconductors [5][6][7][8], semiconductormetal alloys [9] and granular films [10,11].…”

NEGATIVE MAGNETORESISTANCE BEHAVIOURS AND LOCALIZED MAGNETIC MOMENTS IN INSULATING CdSe SEMICONDUCTOR AT VERY LOW TEMPERATURES WITH MAGNETIC FIELD

“…In previous papers we have analyzed the positive MR given by Eq. (13) in different samples of CdSe [27,28] and InP [29][30].…”