Low temperature dependence of resistivity is studied in strongly interacting, dilute 2D GaAs hole systems in presence of magnetic field. Electrical resistivity was analyzed showing the contributions of quantum effects to the transport mechanism. Experimental results are compared with available theoretical models, and physical arguments are given to explain the behaviour of the electrical resistivity with temperature and magnetic field.

Resistance fluctuations near the 'metal-to-insulator' transition in the 2DEG in a Si-MOSFET AIP Conf. ABSTRACTWe investigate the insulating and metallic behaviour in high mobility 2D Si-MOSFETs at very low temperature with parallel magnetic field. At the lowest carrier densities, insulating behaviour is observed with the resistivity increasing with decreasing temperature. As the carrier density increased a transition to metallic behaviour occurs. Despite exhibiting all the properties of the metallic behaviour observed in other material systems, localising corrections due both to weak localization and electron-electron interactions are still present in the metallic regime. For higher carrier densities the metallic regime becomes weaker and the saturation becomes visible at higher temperatures.

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