Positive charge trapping phenomenon in n-channel thin-film transistors with amorphous alumina gate insulators

Abstract

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Charge Trapping Mechanism Leading to Sub-60-mV/decade-Swing FETs

“…7 shows V Ch,max and the static threshold voltage shift ∆V Th as a function of V GS,max . The rise of both quantities demonstrates increased charge trapping for higher V GS,max , which is caused by an increased tunneling I G for higher positive V GS [32].…”

“…The reduction of the SS is caused by simultaneous de-trapping of the positive charge and the semiconductor transition from accumulation to depletion. The material parameters, such as gate dielectric thickness and gate electrode material, influencing the charge trapping/de-trapping behavior and related device physics are investigated in detail in [32]. The output characteristic of the TFT is displayed in …”

“…In our experimental results, I D shows counter-clockwise hysteresis and the SS reduces down to a minimum value of 46 mV/dec at room temperature. We mentioned in [32] that, in this device, the positive charge generation originates from impact ionization or multi-phonon ionization at positive voltage and the de-trapping is achieved through resonant tunneling. The latter, causing the SS reduction, appears to be promising for steep transistor switching.…”

Geometry-Based Tunability Enhancement of Flexible Thin-Film Varactors

“…1a shows the fabrication flow, which is comparable to our previous work [14], [15]. The devices are fabricated on free-standing 50 µm thick Polyimide foil.…”

Enhanced Electrical Properties of Atomic Layer Deposited LaxAlyO Thin Films with Stress Relieved Preoxide Pretreatment

“…Such hysteretic behavior in the C-V characteristics is usually attributed to the trapping effects, or to be more specific, the counter-clockwise C-V hystereses indicate the existence of positive trapped charges in the interfacial region or in the bulk of the insulator [25]. The hysteresis width (Δ V FB ) extracted from the dual-swept C-V curves for the MIS capacitor S1 and S2 are 0.131 and 0.015 V, respectively.…”