Geometry-Based Tunability Enhancement of Flexible Thin-Film Varactors

Knobelspies, Stefan; Gonnelli, C.; Vogt, Christian; Daus, Alwin; Münzenrieder, Niko; Tröster, Gerhard

doi:10.1109/led.2017.2718626

Cited by 4 publications

(3 citation statements)

References 22 publications

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“…6. The IGZO shows the commonly observed CV curve indicating the value of the Al2O3 capacitance at +5 V [15]. The GST CV characteristic shows the p-type transition reaching the Al2O3 capacitance value at -5 V and a frequency of 1 kHz.…”

Section: Resultsmentioning

confidence: 72%

Flexible CMOS electronics based on p-type Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> and n-type InGaZnO<inf>4</inf> semiconductors

Daus¹,

Han²,

Knobelspies³

et al. 2017

2017 IEEE International Electron Devices Meeting (IEDM)

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Abstract-Ultra-thin p-type chalcogenide glass Ge2Sb2Te5 (GST) semiconductor layers are employed to form flexible thin-film transistors (TFTs). For the first time, TFTs based on GST show saturating output characteristics and an ON/OFF ratio up to 388, exceeding present reports by a factor of ~20. The channel current modulation is greatly enhanced by using ultra-thin 5 nm thick amorphous GST layers and 20 nm thick high-k Al2O3 gate dielectrics. Flexible CMOS circuits are realized in combination with the n-type oxide semiconductor InGaZnO4 (IGZO). The CMOS inverters show voltage gain of up to 69. Furthermore, flexible NAND gates are presented. The bending stability is shown for a tensile radius of 6 mm.

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Section: Resultsmentioning

confidence: 72%

Flexible CMOS electronics based on p-type Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> and n-type InGaZnO<inf>4</inf> semiconductors

Daus¹,

Han²,

Knobelspies³

et al. 2017

2017 IEEE International Electron Devices Meeting (IEDM)

Self Cite

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“…Threshold voltage VT and extrinsic field-effect mobility µFE,ext were estimated at the maximum transconductance (gm), using the measured Al2O3 gate oxide capacitance (Cox = 0.21 to 0.32 μF cm -2 ) from the TMD FETs obtained in accumulation (see Supplementary Fig. S7) 32 . The 2 μm long monolayer WSe2 FET exhibits a maximum oncurrent ID = 3.5 ± 0.05 µA µm -1 (the source of the error bars is explained below) at a drain-source voltage VDS = 1 V, which is over twice larger than the highest previously reported for flexible WSe2 (using bilayer exfoliated material) 18 .…”

Section: Flexible Top-gated Field-effect Transistorsmentioning

confidence: 99%

“…As all transistors are n-channel devices, we estimate the capacitance of the Al2O3 gate dielectrics at positive bias voltage (when the channel is in accumulation) by dividing the measured capacitance (Supplementary Fig. S7) with the overlap area of the gate with the source, drain, and semiconductor channel 32 . For MoS2 FETs the extracted Cox ≈ 0.21 μF cm -2 or an equivalent oxide thickness (EOT) ~ 16.4 nm, and for WSe2 and MoSe2 FETs we obtain Cox ≈ 0.32 μF cm -2 or EOT ~ 10.8 nm.…”

Section: Mobility Gate Capacitance and Threshold Voltage Extractionmentioning

confidence: 99%

High-performance flexible nanoscale transistors based on transition metal dichalcogenides

et al. 2021

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Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are good candidates for high-performance flexible electronics. However, most demonstrations of such flexible field-effect transistors (FETs) to date have been on the micron scale, not benefitting from the short-channel advantages of 2D-TMDs. Here, we demonstrate flexible monolayer MoS2 FETs with the shortest channels reported to date (down to 50 nm) and remarkably high on-current (up to 470 µA µm -1 at 1 V drain-to-source voltage) which is comparable to flexible graphene or crystalline silicon FETs. This is achieved using a new transfer method wherein contacts are initially patterned on the rigid TMD growth substrate with nanoscale lithography, then coated with a polyimide (PI) film which becomes the flexible substrate after release, with the contacts and TMD. We also apply this transfer process to other TMDs, reporting the first flexible FETs with MoSe2 and record on-current for flexible WSe2 FETs. These achievements push 2D semiconductors closer to a technology for low-power and high-performance flexible electronics.For several years, the "Internet-of-Things" (IoT) has been increasingly prevalent in the forecast of future electronics. From monitoring the environment and machines around us to the human body, IoT envisions electronics physically present in every aspect of our daily lives. While some devices may be realized on rigid silicon, there is a need for electronics with new non-planar form factors 1,2 , which are thin and light, and can be conformally attached to objects with unusual shapes, on the human skin, or even implanted into the human body 1 . With these applications in mind, we need to realize electronics on flexible substrates that are robust to mechanical strain, easy to integrate, and capable of low-power consumption and high performance at the nanoscale 2,3 .Recent studies have suggested that 2D materials are good candidates for flexible substrates, because of their lack of dangling bonds, good carrier mobility in atomically thin (sub-1 nm) layers, reduced

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Impedance spectroscopy of polyvinyl alcohol-coated carboxyl-functionalized single-walled carbon nanotube flexible film: a generic battery model

Meikap

Das

Meikap

2020

J Mater Sci: Mater Electron

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Geometry-Based Tunability Enhancement of Flexible Thin-Film Varactors

Cited by 4 publications

References 22 publications

Flexible CMOS electronics based on p-type Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> and n-type InGaZnO<inf>4</inf> semiconductors

Flexible CMOS electronics based on p-type Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> and n-type InGaZnO<inf>4</inf> semiconductors

High-performance flexible nanoscale transistors based on transition metal dichalcogenides

Impedance spectroscopy of polyvinyl alcohol-coated carboxyl-functionalized single-walled carbon nanotube flexible film: a generic battery model

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