Abstract:We propose and demonstrate a port-alternated switch-and-select architecture for planar waveguide-based optical switches. The proposed architecture reduces the number of intersections on a path, which leads to both small insertion loss and small path dependence. We demonstrate an 8 × 8 optical switch based on the proposed architecture using a silicon photonic platform, which exhibits a fiber-to-fiber insertion loss of 5.7 dB with a crosstalk below −30 dB. We discuss the scalability of the switch, including the … Show more
“…Table 1 compares the recent demonstrations of large-scale silicon TO switch fabrics. Although the works [21,22] achieve ultra-low crosstalk with the merit of the S&S topology, the port count of these switches is limited to 16 × 16 due to the massive number of waveguide crossings. The work [13] achieves a low-loss 32 × 32 switch chip based on the PILOSS topology.…”
Section: Discussionmentioning
confidence: 99%
“…[7][8][9][10][11][12][13][14][15] Among them, silicon photonics technology shows great potential for building large-scale integrated optical switches, due to the advantages of low cost, compact size, fast and power-efficient tuning, and complementary metal-oxidesemiconductor (CMOS) compatibility, which are highly demanded in hybrid electro-optic (EO) and all-optical switching networks. [16] Recently, great efforts have been devoted to implementing high-performance large-scale silicon optical switches with a variety of architectures including path-independent insertion-loss (PILOSS), [13,17] Benes, [7][8][9][10] dilated-Benes, [18] double-layernetworks (DLN), [14,19] switch-and-select (S&S), [11,[20][21][22] and crossbar. [5,6] Among them, the highest radix of silicon optical switches reaches 240 × 240 based on silicon MEMS-actuated waveguide crossings arranged in a crossbar architecture.…”
Section: Introductionmentioning
confidence: 99%
“…Traditional planar silicon waveguide crossings with an insertion loss of ≈0.05 dB [ 7 ] restrict the scalability of the S&S switch fabrics. Recently, an improved S&S fabric called port‐alternated S&S (PA‐S&S) [ 22 ] has been proposed to reduce the path‐dependent insertion loss by reshuffling switch ports and connections to migrate some waveguide crossings from on‐chip to off‐chip. However, there are more SEs in the power‐consuming “ON” state, resulting in significantly increased power consumption.…”
Section: Introductionmentioning
confidence: 99%
“…The two most widely used switch elements (SEs) in the silicon optical switch chips are Mach-Zehnder interferometers (MZIs) [7][8][9]14,[17][18][19][20][21][22][23] and micro-ring resonators (MRRs) [10][11][12]15,24] actuated by thermo-optic (TO) or EO effects of silicon. MRR-based optical switches show the advantages of low power consumption and compact size, but the wavelength sensitivity increases the control complexity in real applications.…”
Large‐scale silicon optical switches are essential to support the ever‐increasing data traffic. Among the various switching architectures, the well‐known switch‐and‐select (S&S) architecture has the advantages of low crosstalk and strict non‐blocking. However, it suffers from high path‐dependent losses as the waveguide crossings increase dramatically with the number of ports. In this paper, a large‐scale 32 × 32 S&S optical switch on a multi‐layer Si3N4‐on‐SOI platform is reported. The optical switch chip incorporates 1984 broadband thermo‐optic Mach‐Zehnder interferometer (MZI)‐based switch elements, 246 016 three‐dimensional (3D) waveguide crossings, and 2048 interlayer couplers. Both ≈1‐mdB‐loss 3D waveguide crossings and ≈0.3‐dB‐loss interlayer couplers are realized, significantly reducing the overall insertion loss and footprint of the switch chip. The measured average fiber‐to‐fiber insertion loss is 12.88 dB at the 1580 nm wavelength. In addition, the crosstalk is less than −20.7 dB over the 110‐nm wavelength range. The power consumption of the entire switch chip is only ≈0.98 W due to the air trenches and substrate undercut. High‐fidelity optical transmission of a 50 Gb s−1 quadrature phase‐shift keying signal verifies the high‐performance routing capability of this chip. These results indicate that the large‐scale optical switch with broadband, low crosstalk, and high‐power efficiency is promising for datacenter optical network applications.
“…Table 1 compares the recent demonstrations of large-scale silicon TO switch fabrics. Although the works [21,22] achieve ultra-low crosstalk with the merit of the S&S topology, the port count of these switches is limited to 16 × 16 due to the massive number of waveguide crossings. The work [13] achieves a low-loss 32 × 32 switch chip based on the PILOSS topology.…”
Section: Discussionmentioning
confidence: 99%
“…[7][8][9][10][11][12][13][14][15] Among them, silicon photonics technology shows great potential for building large-scale integrated optical switches, due to the advantages of low cost, compact size, fast and power-efficient tuning, and complementary metal-oxidesemiconductor (CMOS) compatibility, which are highly demanded in hybrid electro-optic (EO) and all-optical switching networks. [16] Recently, great efforts have been devoted to implementing high-performance large-scale silicon optical switches with a variety of architectures including path-independent insertion-loss (PILOSS), [13,17] Benes, [7][8][9][10] dilated-Benes, [18] double-layernetworks (DLN), [14,19] switch-and-select (S&S), [11,[20][21][22] and crossbar. [5,6] Among them, the highest radix of silicon optical switches reaches 240 × 240 based on silicon MEMS-actuated waveguide crossings arranged in a crossbar architecture.…”
Section: Introductionmentioning
confidence: 99%
“…Traditional planar silicon waveguide crossings with an insertion loss of ≈0.05 dB [ 7 ] restrict the scalability of the S&S switch fabrics. Recently, an improved S&S fabric called port‐alternated S&S (PA‐S&S) [ 22 ] has been proposed to reduce the path‐dependent insertion loss by reshuffling switch ports and connections to migrate some waveguide crossings from on‐chip to off‐chip. However, there are more SEs in the power‐consuming “ON” state, resulting in significantly increased power consumption.…”
Section: Introductionmentioning
confidence: 99%
“…The two most widely used switch elements (SEs) in the silicon optical switch chips are Mach-Zehnder interferometers (MZIs) [7][8][9]14,[17][18][19][20][21][22][23] and micro-ring resonators (MRRs) [10][11][12]15,24] actuated by thermo-optic (TO) or EO effects of silicon. MRR-based optical switches show the advantages of low power consumption and compact size, but the wavelength sensitivity increases the control complexity in real applications.…”
Large‐scale silicon optical switches are essential to support the ever‐increasing data traffic. Among the various switching architectures, the well‐known switch‐and‐select (S&S) architecture has the advantages of low crosstalk and strict non‐blocking. However, it suffers from high path‐dependent losses as the waveguide crossings increase dramatically with the number of ports. In this paper, a large‐scale 32 × 32 S&S optical switch on a multi‐layer Si3N4‐on‐SOI platform is reported. The optical switch chip incorporates 1984 broadband thermo‐optic Mach‐Zehnder interferometer (MZI)‐based switch elements, 246 016 three‐dimensional (3D) waveguide crossings, and 2048 interlayer couplers. Both ≈1‐mdB‐loss 3D waveguide crossings and ≈0.3‐dB‐loss interlayer couplers are realized, significantly reducing the overall insertion loss and footprint of the switch chip. The measured average fiber‐to‐fiber insertion loss is 12.88 dB at the 1580 nm wavelength. In addition, the crosstalk is less than −20.7 dB over the 110‐nm wavelength range. The power consumption of the entire switch chip is only ≈0.98 W due to the air trenches and substrate undercut. High‐fidelity optical transmission of a 50 Gb s−1 quadrature phase‐shift keying signal verifies the high‐performance routing capability of this chip. These results indicate that the large‐scale optical switch with broadband, low crosstalk, and high‐power efficiency is promising for datacenter optical network applications.
“…These 3D integration photonic devices are composed of either multiple passive layers [22] or multiple passive layers integrated with another active one [23], but none of them are all active layers. The improved scale and functionality cannot compensate for the increasing cost and fabrication complexity [16,17,24]. A single-chip OPA was recently realized based on a wafer-scale 3D silicon integrated photonic platform.…”
To achieve complex functionality with small size, weight and power, photonic integrated circuits (PIC) are expanded from two-dimensional (2D) to three-dimensional (3D). In this paper, a new design for a scalable 3D silicon optical switch is proposed. Key elements, including silicon electro-optic switches, crossings, and interlayer transitions are used to define and optimize the 3D optical switching network. The architecture is based on CLOS architecture, which can be extended to multiple layers. Silicon-based two-and three-layer switches are carefully designed and analyzed as an example based on the transfer matrix technique (TMT). In a 4×4 two-layer optical switch, the average insertion loss at 1550 nm wavelength is ~4.16 dB, and ~3.69 dB for the "all-cross" and "all-bar" states, respectively. In a 4×4 threelayer optical switch, the average insertion loss at 1550 nm wavelength is ~5.96 dB, and ~5.41 dB for the "all-cross" and "allbar" states, respectively. The architecture also shows the scalability of both the port number and the layer number. The scalable 3D architecture proposed could improve the interconnect density twice and thrice in a single-layer design.
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