Porous silicon formation by stain etching

Vázsonyi, É.; Szilágyi, E.; Petrik, P.; Horváth, Z.E.; Lohner, T.; Fried, M.; Jalsovszky, G.

doi:10.1016/s0040-6090(00)01816-2

Cited by 86 publications

(67 citation statements)

References 15 publications

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“…A solution composed of HF and HNO 3 in a volume ratio of 500:1 was used to etch the samples. 8 The Si wafers were etched in a disk of 11 mm in diameter. Since the etching is very sensitive to the type and doping concentration of the silicon wafer, 20 a small amount of NaNO 2 ͑0.1 g / l͒ was added to the etch solution in order to homogenize the stain etching, according to the procedure described by Kelly et al 7 A series of PS samples with etching times ranging from 1 to 10 min was produced.…”

Section: Methodsmentioning

confidence: 99%

“…By stain etching, a solution containing HF, HNO 3 , and water is used in a process where an oxidation of silicon atoms occurs by hole injection from nitric acid and, simultaneously, its reduction produces NO and water. The stain etching can be an advantageous method in the formation of porous silicon layers, [6][7][8] mainly for substrates with higher doping level.…”

Section: Introductionmentioning

confidence: 99%

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X-ray investigation of nanostructured stain-etched porous silicon

Abramof

Beloto

Ueta

et al. 2006

Journal of Applied Physics

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The structure of porous silicon layers was accurately investigated by diverse x-ray methods. A series of samples with etching times varying from 1 to 10 min was produced by chemical etch using a HF/ HNO 3 -based solution assisted with NaNO 2 . The porosity determined from low-angle x-ray reflectivity spectra was found to fluctuate from 35% to 55% as the etch proceeds. Reciprocal space mapping around the ͑004͒ Si lattice point revealed that the Si crystallites are deformed due to a distribution of in-plane compressive strain caused by the neighboring pores, which leads to an expansion of the perpendicular lattice parameter. No signature of mosaicity was found. The perpendicular strain could be precisely determined by fitting the x-ray-diffraction spectra, measured in the triple-axis configuration, to a set of Voigt and Gaussian distributions. These strain distributions are certainly associated with the different population of crystallite sizes formed during the stain etching process. We were able here to determine the temporal evolution of the strain inside the nanostructured porous silicon.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

X-ray investigation of nanostructured stain-etched porous silicon

Abramof

Beloto

Ueta

et al. 2006

Journal of Applied Physics

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“…This result could indicate that activation of Eu 3+ ions in the non-textured layer occurs not only in the crystalline silicon matrix, but also in the top oxide layer formed during the thermal process [4]. The 5 D 0 7 F 2 transition in the PL spectrum of the PSLs is wider and does not split, suggesting that the activation of Eu 3+ ions occurs in a large variety of sites: the crystalline silicon matrix and different sites in the amorphous layer formed on the surface of the PSLs [24]. This result differs from the same transition in the emission spectrum of Eu 3+ doped PSLs formed by electrochemical anodization [16], which present a 5 D 0 7 F 0 transition split.…”

Section: Resultsmentioning

confidence: 99%

Photoluminescence of monocrystalline and stain-etched porous silicon doped with high temperature annealed europium

Guerrero‐Lemus

Montesdeoca-Santana

González‐Díaz

et al. 2011

J. Phys. D: Appl. Phys.

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“…1 Light emitting PS layer has been produced by using different techniques, such as electrochemical anodization etching technique, 1 stain etching process, 2 and hydrothermal etching technique. 3 Among these methods, anodization has been recognized as the most technologically feasible and economically superior technique for production of PS layer.…”

Section: Introductionmentioning

confidence: 99%

Influence of applied current density on the nanostructural and light emitting properties of n-type porous silicon

Çetinel

Artunç

Şahin

et al. 2015

Int. J. Mod. Phys. B

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Effects of current density on nanostructure and light emitting properties of porous silicon (PS) samples were investigated by field emission scanning electron microscope (FE-SEM), gravimetric method, Raman and photoluminescence (PL) spectroscopy. FE-SEM images have shown that below 60 mA/cm 2 , macropore and mesopore arrays, exhibiting rough morphology, are formed together, whose pore diameter, pore depth and porosity are about 265-760 nm, 58-63 µm and 44-61%, respectively. However, PS samples prepared above 60 mA/cm 2 display smooth and straight macropore arrays, with pore diameter ranging from 900-1250 nm, porosity of 61-80% and pore depth between 63-69 µm. Raman analyses have shown that when the current density is increased from 10 mA/cm 2 to 100 mA/cm 2 , Raman peaks of PS samples shift to lower wavenumbers by comparison to crystalline silicon (c-Si). The highest Raman peak shift is found to be 3.2 cm −1 for PS sample, prepared at 90 mA/cm 2 , which has the smallest nanocrystallite size, about 5.2 nm. This sample also shows a pronounced PL, with the highest blue shifting, of about 12 nm. Nanocrystalline silicon, with the smallest nanocrystallite size, confirmed by our Raman analyses using microcrystal model (MCM), should be responsible for both the highest Raman peak shift and PL blue shift due to quantum confinement effect (QCE).

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Porous silicon formation by stain etching

Cited by 86 publications

References 15 publications

X-ray investigation of nanostructured stain-etched porous silicon

X-ray investigation of nanostructured stain-etched porous silicon

Photoluminescence of monocrystalline and stain-etched porous silicon doped with high temperature annealed europium

Influence of applied current density on the nanostructural and light emitting properties of n-type porous silicon

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