Porous silicon and siloxene: Vibrational and structural properties

Fuchs, H. D.; Stutzmann, M.; Brandt, Martin S.; Rosenbauer, M.; Weber, J.; Breitschwerdt, A.; Deák, Péter; Cardona, M.

doi:10.1103/physrevb.48.8172

Cited by 179 publications

(99 citation statements)

References 69 publications

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“…The emission characteristics are very interesting because the emission is strong and stable enough for practical applications such as optoelectronic devices. The emission behaviour of the siloxene is strongly affected by the structure [4]. In this structure, oxygen plays an important role for this emission [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

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Oxygen-crosslinked polysilane: the new class of Si-related material for electroluminescent devices

Hiraoka

Majima

Murai

et al. 1997

Polym. Adv. Technol.

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The preparation and optical properties of the novel silicon‐related material named oxygen‐crosslinked polysilane were investigated. The oxygen‐crosslinked polysilane was prepared by the thermal annealing of the precursor polysilane bearing alkoxyl groups. The photoluminescence consisting of a broad visible band at about 440 nm and a relatively sharp band at about 360 nm was observed at room temperature. The relative intensities of the visible emission were changed during the crosslinking. The visible emission was greatly affected by the steric hindrance of the alkoxyl groups of the precursor. The visible electroluminescene (EL) was also observed uniformly from the EL cell consisting of the oxygen‐crosslinked polysilane film sandwiched between A1 electrode and indium‐tin‐oxide (ITO) electrode. The current densities of the EL cell increased with an increase in the oxygen‐crosslinking. © 1997 John Wiley & Sons, Ltd.

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Section: Introductionmentioning

confidence: 99%

“…Siloxene is one of the oxygen-introduced silicon materials generally prepared from calcium disilicide. The structure of siloxene varies with thermal annealing [4]. In general, the siloxene has silicon backbones, and silanol groups attached directly to the silicon backbone.…”

Section: Introductionmentioning

confidence: 99%

Oxygen-crosslinked polysilane: the new class of Si-related material for electroluminescent devices

Hiraoka

Majima

Murai

et al. 1997

Polym. Adv. Technol.

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“…Also a report of Brandt et al 7 identifies siloxene derivatives as the source of the visible room-temperature PL in porous silicon. Comprehensive comparisons of light emission from porous silicon and siloxene derivatives are found in articles of Fuchs et al 8 and Stutzmann et al 9 In view of such a controversy the main challenge for investigations of silicon nanocrystals is to elucidate the origin of the visible PL.…”

Section: Introductionmentioning

confidence: 99%

Experimental investigation of band structure modification in silicon nanocrystals

et al. 2001

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Experimental studies of size-related effects in silicon nanocrystals are reported. We present investigations carried out on nanocrystals prepared from single-crystal Si:P wafer by ball milling. The average final grain dimension varied depending on the way of preparation in the range between 70 and 230 nm. The ball milling was followed by sedimentation and selection of the smallest grains. The initial grain size distribution was measured by scanning electron microscopy. Further reduction in size was achieved by oxidation at 1000°C which creates a silicon dioxide layer around a silicon core. The oxidation process was monitored by transmission electron microscopy and the growth speed of SiO 2 was estimated in order to model the grain size of nanocrystals. Crystallinity of silicon grains was confirmed by x-ray diffraction and by transmission electron microscopy using a bright/dark field method and selected area diffraction pattern. In the silicon nanocrystals the electron energy levels are shifted which was observed separately for conduction band, valence band and energy band gap. Electron paramagnetic resonance was applied to investigate variation of the conduction band minimum by monitoring its influence on the hyperfine interaction of phosphorus shallow donor. On the basis of these results an explicit expression for conduction band upshift as a function of average grain size has been derived. Information about the downshift of the valence band was obtained from measurements on a photoluminescence band related to a deep to shallow level transition. A perturbation of a few meV for grain sizes of the order about 100 nm has been observed. Internal consistency of these findings has been examined by investigation of the photoluminescence band due to an electron-hole recombination whose energy is directly related to the band gap of silicon.

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“…These estimates indicate that surface phenomena become more and more pronounced with the decreasing size of the objects and, at the nano-scales not only quantum size effects can shape the electronic properties of the nanostructures but also surface phenomena can. For silicon, which is known to be a material sensitive to surface termination, this conclusion is particularly important as the PL from silicon nanostructures has been found by numerous groups to be quite sensitive to "surface chemistry" (SC), e.g., the specific way that the silicon surface bonds are terminated [11,12].…”

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confidence: 98%

On the origin of photoluminescence from silicon nanostructures: a new perspective

Sa’ar

2011

Phys. Status Solidi C

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This review is aimed at describing recent developments in the field of silicon nanostructures, particularly those properties and phenomena that are connected with the room‐temperature, photoluminescence (PL) from these nanostructures. Two classes of models are the most notable ones: the quantum confinement model that assigns the PL to quantum size effects in the nanocrystalline silicon core, and the surface chemistry model that assigns the PL to surface phenomena at the interface between the crystalline core and the host matrix that wrap the nanostructures. In recent years, with the improvement in growth techniques and methods to control dimensionality and shape, it has been suggested that none of the above models alone can explain the entire spectrum of optical phenomena in silicon nanostructures. Instead, a refined model that takes into accounts both phenomena should be considered. This review describes some of these recent developments in the field of silicon nanostructures, particularly those experiments and models that indicate the mutual role of quantum confinement and surface chemistry in shaping the optical properties of these nanostructures. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Porous silicon and siloxene: Vibrational and structural properties

Cited by 179 publications

References 69 publications

Oxygen-crosslinked polysilane: the new class of Si-related material for electroluminescent devices

Oxygen-crosslinked polysilane: the new class of Si-related material for electroluminescent devices

Experimental investigation of band structure modification in silicon nanocrystals

On the origin of photoluminescence from silicon nanostructures: a new perspective

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