Abstract:Porous silicon (PSi) has developed for many applications such as gas and humidity sensors. Various methods are available to fabricate PSi, and electrochemical anodization is common due to low cost and easy use. Current density, etching/anodization time, type of etching solution, and electrode distance are the parameters determining resulting pores. The substrate used n-type silicon wafer with (111)-orientation and resistivity of 1.5-4.5 Ω.cm with a size of 1.5×1 cm2. The cleaning process of the samples employe… Show more
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