Synthesis Gallium Nitride on Porous Silicon Nano-Structure for Optoelectronics Devices

Jabbar, Haneen D.; Fakhri, Makram A.; AbdulRazzaq, Mohammed Jalal

doi:10.1007/s12633-022-01999-8

Cited by 22 publications

(12 citation statements)

References 59 publications

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“…These peaks were indexed and consistent with the diffraction data of a silicon standard (JCPDS card 27-1402). A high and optimum crystallinity texture of the porous silicon structure appeared at an etching time of 10 min, according to Sampath et al [46][47][48], and Fig. 4c presents the main peak (400), and it is clear that its splatted to two peaks one for Si and other for Psi [43].…”

Section: Structural Properties Xrdmentioning

confidence: 71%

Effect of Different Etching Time on Fabrication of an Optoelectronic Device Based on GaN/Psi

Jabbar¹,

Fakhri²,

Razzaq³

et al. 2023

Journal of Renewable Materials

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Gallium nitride (GaN)/porous silicon (PSi) film was prepared using a pulsed laser deposition method and 1064 nm Nd: YAG laser for optoelectronic applications and a series of Psi substrates were fabricated using a photoelectrochemical etching method assisted by laser at different etching times for 2.5-15 min at 2.5 min intervals. X-ray diffraction, room-temperature photoluminescence, atomic force microscopy and field emission scanning electron microscopy images, and electrical characteristics in the prepared GaN on the Psi film were investigated. The optimum Psi substrate was obtained under the following conditions: 10 min, 10 mA/cm 2 , and 24% hydrofluoric acid. The substrate exhibited two highly cubic crystalline structures at (200) and (400) orientations and yellow visible band photoluminescence, and homogeneous pores formed over the entire surface. The pores had steep oval shapes and were accompanied by small dark pores that appeared topographically and morphologically. The GaN/Psi film fabricated through PLD exhibited a high and hexagonal crystallographic texture in the (002) plane. Spectroscopic properties results revealed that the photoluminescence emission of the deposited nano-GaN films was in the ultraviolet band (374 nm) related to GaN material and in the near-infrared band (730 nm) related to the Psi substrate. The topographical and morphological results of the GaN films confirmed that the deposited film contained spherical grains with an average diameter of 51.8 nm and surface roughness of 4.8 nm. The GaN/Psi surface showed a cauliflower-like morphology, and the built-in voltage decreased from 3.4 to 2.7 eV after deposition. The fabricated GaN/Psi film exhibited good electrical characteristics.

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Section: Structural Properties Xrdmentioning

confidence: 71%

Effect of Different Etching Time on Fabrication of an Optoelectronic Device Based on GaN/Psi

Jabbar¹,

Fakhri²,

Razzaq³

et al. 2023

Journal of Renewable Materials

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“…where λ is the wavelength of x-ray CuKα source, β is the full width at half maximum (FWHM) of XRD peak, and finally θ is Bragg's angle. The dislocation density (δ) and strain (ε) of LiNbO 3 nanoparticles were calculated using the following relationships [54][55][56][57]:…”

Section: Resultsmentioning

confidence: 99%

Preparation of LiNbO₃ nanoparticles by green synthesis laser ablation in water

Alwazny,

Ismail,

Salim

2023

Adv. Nat. Sci: Nanosci. Nanotechnol.

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The use of LiNbO3 nanoparticles in nonlinear applications is attractive and promising. The particle size and morphology of LiNbO3 are the key parameters affecting their application. In this study, spherical nanoparticles of lithium niobate were synthesised by nanosecond Nd:YAG laser ablation in water. The polycrystalline, rhombohedral structure of the synthesised LiNbO3 nanoparticles with x-ray diffraction experiments was verified. The bandgap energy of colloidal LiNbO3 nanoparticles varied between 4.25 and 4.9 eV based on the laser fluence, according to the optical characteristics. The photoluminescence (PL) reveals that the emission peaks are centered at 293, 300, 305, and 309 nm for samples prepared at 1.3, 1.6, 2.0, and 2.2 J cm−2/pulse, respectively. The transmission electron microscope investigation confirmed the formation of spherical nanoparticles with an average size ranging from 18 to 34 nm. Raman studies on nanoparticles synthesised at various laser fluences are being conducted.

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“…These peaks were in conformity and accordance with the GaN standard's diffraction data (JCPDS card 01-074-0243) of a hexagonal crystalline structure. It's worth noting that the GaN peak at (002) shows a high sharp peak due to the smaller crystal size [22]. The crystal size was calculated for the Psi substrate and grown GaN thin film from th e XRD pattern as shown in Table 3 based on the Scherrer Equation [23]:…”

Section: Structural Characteristic Analysismentioning

confidence: 99%

The Structural and Optical Investigation of Grown GaN Film on Porous Silicon Substrate Prepared by PLD

Jabar¹,

Fakhri²,

AbdulRazzaq³

et al. 2023

ETJ

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Synthesis Gallium Nitride on Porous Silicon Nano-Structure for Optoelectronics Devices

Cited by 22 publications

References 59 publications

Effect of Different Etching Time on Fabrication of an Optoelectronic Device Based on GaN/Psi

Effect of Different Etching Time on Fabrication of an Optoelectronic Device Based on GaN/Psi

Preparation of LiNbO₃ nanoparticles by green synthesis laser ablation in water

The Structural and Optical Investigation of Grown GaN Film on Porous Silicon Substrate Prepared by PLD

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Synthesis Gallium Nitride on Porous Silicon Nano-Structure for Optoelectronics Devices

Cited by 22 publications

References 59 publications

Effect of Different Etching Time on Fabrication of an Optoelectronic Device Based on GaN/Psi

Effect of Different Etching Time on Fabrication of an Optoelectronic Device Based on GaN/Psi

Preparation of LiNbO3 nanoparticles by green synthesis laser ablation in water

The Structural and Optical Investigation of Grown GaN Film on Porous Silicon Substrate Prepared by PLD

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Product

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Preparation of LiNbO₃ nanoparticles by green synthesis laser ablation in water