Polysilicon sacrificial layer etching using ClF3 for thin film encapsulation of silicon acceleration sensors with high aspect ratio

Metzger, Lars; Fischer, F.; Mokwa, W.

doi:10.1016/j.sna.2006.03.017

Cited by 8 publications

(6 citation statements)

References 7 publications

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“…Common materials used as sacrificial layers in surface micromachined MEMS are amorphous silicon [ 36 , 37 ], polysilicon [ 37 , 38 , 39 ], polymers such as polyimide [ 20 , 40 , 41 ] and Parylene [ 42 ], and PECVD silicon dioxide [ 43 ]. In the case of complex devices with suspended ECD Ni-Fe structures, the authors have shown that surface micromachining processes employing polysilicon or polymers as sacrificial layer may cause a progressive development of stress gradient in the electrodeposits, due to oxidation of the Ni-Fe film and the thermal budget applied during the required fabrication steps [ 25 ].…”

Section: Selective Sacrificial Layer Etchingmentioning

confidence: 99%

Integration of Electrodeposited Ni-Fe in MEMS with Low-Temperature Deposition and Etch Processes

et al. 2017

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This article presents a set of low-temperature deposition and etching processes for the integration of electrochemically deposited Ni-Fe alloys in complex magnetic microelectromechanical systems, as Ni-Fe is known to suffer from detrimental stress development when subjected to excessive thermal loads. A selective etch process is reported which enables the copper seed layer used for electrodeposition to be removed while preserving the integrity of Ni-Fe. In addition, a low temperature deposition and surface micromachining process is presented in which silicon dioxide and silicon nitride are used, respectively, as sacrificial material and structural dielectric. The sacrificial layer can be patterned and removed by wet buffered oxide etch or vapour HF etching. The reported methods limit the thermal budget and minimise the stress development in Ni-Fe. This combination of techniques represents an advance towards the reliable integration of Ni-Fe components in complex surface micromachined magnetic MEMS.

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Section: Selective Sacrificial Layer Etchingmentioning

confidence: 99%

Integration of Electrodeposited Ni-Fe in MEMS with Low-Temperature Deposition and Etch Processes

et al. 2017

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“…However, the etch rate is limited by the vapor pressure of the solid XeF2. The etching mechanism has already been described in detail in various papers [2][3][4].…”

Section: Chemical Etching Process With Xef2mentioning

confidence: 99%

Silicon Sacrificial Layer Technology for the Production of 3D MEMS (EPyC Process)

Louriki

Staffeld

Kaelberer

et al. 2017

Proceedings of Eurosensors 2017, Paris, France, 3–6 September 2017

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Abstract:The EPyC process uses silicon sacrificial layer technology, which makes it possible to generate high volume sacrificial structures of up to 100 microns thickness. The biggest challenge is the rapid and complete removal of the 3D sacrificial structure at the end of the process. This paper examines and compares in detail two silicon dry etching methods to optimize a new silicon etching process for successful EPyC manufacturing.

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“…I-t plot (c). [34] As to the sensing mechanism of the diamond gaseous sensor, it was recently proposed that a surface hydrogenation layer with greatly increased p-type conductivity can play a key role. [35] It has been proposed that hydrogenation could raise the valence band maximum of diamond sufficiently to a place just above the chemical potential of a mildly acidic water layer physisorbed at the surface, and thus produces ptype conductivity.…”

Section: Gas Sensing Properties Of Diamond Nanocone Arraysmentioning

confidence: 99%

Unique electrical properties of nanostructured diamond cones

Wang

et al. 2013

Chinese Phys. B

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The preparation and electrical properties of diamond nanocones are reviewed, including a maskless etching process and mechanism of large-area diamond conical nanostructure arrays using a hot filament chemical vapor deposition (HFCVD) system with negatively biased substrates, and the field electron emission, gas sensing, and quantum transport properties of a diamond nanocone array or an individual diamond nanocone. Optimal cone aspect ratio and array density are investigated, along with the relationships between the cone morphologies and experimental parameters, such as the CH4/H2 ratio of the etching gas, the bias current, and the gas pressure. The reviewed experiments demonstrate the possibility of using nanostructured diamond cones as a display device element, a point electron emission source, a gas sensor or a quantum device.

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Polysilicon sacrificial layer etching using ClF3 for thin film encapsulation of silicon acceleration sensors with high aspect ratio

Cited by 8 publications

References 7 publications

Integration of Electrodeposited Ni-Fe in MEMS with Low-Temperature Deposition and Etch Processes

Integration of Electrodeposited Ni-Fe in MEMS with Low-Temperature Deposition and Etch Processes

Silicon Sacrificial Layer Technology for the Production of 3D MEMS (EPyC Process)

Unique electrical properties of nanostructured diamond cones

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