Polysilicon resistor degradation - modeling and mechanism

A Temperature- and Aging-Compensated RC Oscillator With ±1030-ppm Inaccuracy From40 °C to 85 °C After Accelerated Aging for 500 h at 125 °C

“…Various resistors are available in standard CMOS technology, including poly, diffusion, and metal resistors, each governed by distinct aging mechanisms. The primary factor responsible for the shift in poly resistance is the depassivation of hydrogen at grain boundaries, coupled with hydrogen migration within an electric field [26], [27], [28], [29], [30], [31]. On the other hand, the alteration in metal resistance predominantly stems from electromigration (EM), a phenomenon that propels the migration of metal atoms and consequently leads to the formation of voids within the resistor's structure [31], [32], [33].…”

“…where A is an empirically determined constant, J is current density (A/cm 2 ), n is the empirically determined current density factor, E a is the activation energy (eV), k is Boltzmann's constant, and T is the absolute junction temperature of the resistor during the aging stress. The TTF estimation can be achieved through Black's approach, as demonstrated by (1) [29], [31], [32], [33], or by employing an alternate model, as depicted in (2) [26], [29], [31] to accommodate low current density (J ) scenarios. E a represents a vital aging-associated parameter obtained by fitting aging experimental data with (1) or (2).…”

Evaluation of stability and robustness of poly-Si resistors with different dopant concentrations

“…To date, time degradation, dopant concentration effect and physical model derivation of poly-Si resistors have not been thoroughly investigated. 22) In addition to stability as a reliability index, robustness is an important quality index for the application of poly-Si resistors. The transmission line pulse (TLP) test is an important assessment for evaluating the capability of an electrical component to resist short current pulse stress.…”