Polysilicon resistor stability under voltage stress for safe-operating area characterization

Kendrick, Christopher P.; Cook, Michael J.; Gambino, Jeff; Myers, Tracy; Slezák, J.; Hirano, Takuichi; Sano, Toshiaki; Watanabe, Yuya; Ozeki, K.

doi:10.1109/irps.2018.8353686

Cited by 6 publications

(2 citation statements)

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“…Various resistors are available in standard CMOS technology, including poly, diffusion, and metal resistors, each governed by distinct aging mechanisms. The primary factor responsible for the shift in poly resistance is the depassivation of hydrogen at grain boundaries, coupled with hydrogen migration within an electric field [26], [27], [28], [29], [30], [31]. On the other hand, the alteration in metal resistance predominantly stems from electromigration (EM), a phenomenon that propels the migration of metal atoms and consequently leads to the formation of voids within the resistor's structure [31], [32], [33].…”

Section: A Techniques For Long-term Stability Improvementmentioning

confidence: 99%

“…The aging rate of poly and metal resistors in a standard CMOS process depends on the duty cycle. Lower duty cycles lead to slower aging rates of the resistors [30], [33]. By reducing the on-time of the reference oscillator, the amount of time that a current flows through the active devices and interconnects decreases, which also can slow down the rate of specific aging mechanisms, such as hot carrier injection (HCI) and EM.…”

Section: A Techniques For Long-term Stability Improvementmentioning

confidence: 99%

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A Temperature- and Aging-Compensated RC Oscillator With ±1030-ppm Inaccuracy From40 °C to 85 °C After Accelerated Aging for 500 h at 125 °C

Park,

Pal,

et al. 2023

IEEE J. Solid-State Circuits

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This article presents a temperature-and agingcompensated RC oscillator (TACO) in which the long-term drift of the main oscillator is compensated by periodically locking its frequency to that of the less-aged reference oscillator. To improve the long-term stability of the TACO, it employs techniques, such as the use of higher activation energy (E a ) resistors, switched dual RC branches to mitigate stress from dc-current-induced electromigration (EM), and duty cycling to slow down the aging rate of the reference oscillator. Using the proposed techniques, a prototype 100-MHz RC oscillator fabricated in a 65-nm CMOS process achieves an inaccuracy of ±1030 ppm from −40 • C to 85 • C after 500 h of accelerated aging at 125 • C, with 5.1-ps rms period jitter and a power efficiency of 1.4 µW/MHz.

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