Polysilicon Piezoresistive Pressure Sensors based on MEMS Technology

Akhtar, Jamil; Dixit, B. B.; Pant, B. D.; Deshwal, V.P.

doi:10.1080/03772063.2003.11416360

Cited by 19 publications

(3 citation statements)

References 11 publications

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“…Performance of piezoresistors are determined by the properties of the substrate and sensing material, placement of the piezoresistor [23,24]. Moreover, dimensions of the piezoresistors and thickness of the square diaphragm effects the performance of the pressure sensor by improving the yield [25,26]. In this work, zig-zag shaped piezoresistor is selected to cover the maximum strain at the square diaphragm as shown in Figure 1.…”

Section: Modelling and Simulationmentioning

confidence: 99%

A novel graphene pressure sensor with zig–zag shaped piezoresistors for maximum strain coverage for enhancing the sensitivity of the pressure sensor

Nag

Kumar

Pratap

2021

Int. J. Simul. Multidisci. Des. Optim.

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The demand for flexible and wearable sensors is increasing day by day due to varied applications in the biomedical field. Especially highly sensitive sensors are required for the detection of the low signal from the body. It is important to develop a pressure sensor that can convert the maximum input signal into the electrical output. In this paper, the design and performance of graphene piezoresistive pressure sensors have been investigated by zig–zag piezoresistors on the square diaphragm. On the applied pressure, deformation is sensed by the piezoresistors above the diaphragm. Finite element analysis is carried out to investigate the effect of zig–zag piezoresistors on the square diaphragm. Simulated results for the optimized design are obtained for an operating range of 0–100 psi for pressure sensitivity.

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Section: Modelling and Simulationmentioning

confidence: 99%

A novel graphene pressure sensor with zig–zag shaped piezoresistors for maximum strain coverage for enhancing the sensitivity of the pressure sensor

Nag

Kumar

Pratap

2021

Int. J. Simul. Multidisci. Des. Optim.

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“…Silicon wafer is first oxidized and silicon nitride is deposited using LPCVD to provide a mask for subsequent anisotropic etching in aqueous KOH for diaphragm realization. The details of the process sequence can be found out elsewhere (Akhtar et al , 2003a). The array of etched cavities is shown in Figure 2.…”

Section: Fabrication Processmentioning

confidence: 99%

“…In the fabrication of polysilicon piezoresistive pressure sensor using silicon bulk micromachining, polysilicon resistors are realized on the silicon diaphragm in full or half wheatstone bridge configuration (Akhtar et al , 2003a). A large number of arrays of the diaphragm are accommodated on the silicon wafer in case of the batch fabrication of the sensors.…”

Section: Introductionmentioning

confidence: 99%

A wet‐etch method with improved yield for realizing polysilicon resistors in batch fabrication of MEMS pressure sensor

Singh

Gupta²,

Azam³

et al. 2009

Sensor Review

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Purpose-The purpose of this paper is to present a selective wet-etching method of boron doped low-pressure chemical vapour deposition (LPCVD) polysilicon film for the realization of piezoresistors over the bulk micromachined diaphragm of (100) silicon with improved yield and uniformity. Design/methodology/approach-The method introduces discretization of the LPCVD polysilicon film using prior etching for the grid thus dividing each chip on the entire wafer. The selective etching of polysilicon for realizing of piezoresistors is limited to each chip area with individual boundaries. Findings-The method provides a uniform etching on the entire silicon wafer irrespective of its size and leads to economize the fabrication process in a batch production environment with improved yield. Research limitations/implications-The method introduces one extra process step of photolithography and subsequent etching for discretizing the polysilicon film. Practical implications-The method is useful to enhance yield while defining metal lines for contact purposes on fabricated electronic structures using microelectronics. Stress developed in LPCVD polysilicon can be removed using proposed approach of discretization of polysilicon film. Originality/value-The work is an outcome of regular fabrication work using conventional approaches in an R&D environment. The proposed method replaces the costly reactive ion etching techniques with stable reproducibility and ease in its implementation.

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Design and Development of MEMS Pressure Sensor Characterization Setup with Low Interfacing Noise by Using NI-PXI System

Singh

Akhtar

Varghese

et al. 2014

Physics of Semiconductor Devices

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Polysilicon Piezoresistive Pressure Sensors based on MEMS Technology

Cited by 19 publications

References 11 publications

A novel graphene pressure sensor with zig–zag shaped piezoresistors for maximum strain coverage for enhancing the sensitivity of the pressure sensor

A novel graphene pressure sensor with zig–zag shaped piezoresistors for maximum strain coverage for enhancing the sensitivity of the pressure sensor

A wet‐etch method with improved yield for realizing polysilicon resistors in batch fabrication of MEMS pressure sensor

Design and Development of MEMS Pressure Sensor Characterization Setup with Low Interfacing Noise by Using NI-PXI System

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