Polymorphous silicon thin films deposited at high rate: Transport properties and density of states

Soro, Yrebegnan Moussa; Абрамов, А.; Gueunier‐Farret, Marie‐Estelle; Johnson, Erik; Longeaud, Christophe; Cabarrocas, Pere Roca i; Kleider, Jean‐Paul

doi:10.1016/j.tsf.2007.12.123

Cited by 5 publications

(2 citation statements)

References 9 publications

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“…That may be the reason that the E g of a-Si film decreases with increasing ion fluence. SORO Y. M. et al [16] agreed that the presence of a small fraction of crystalline which can not be detected by Raman spectroscopy would result in the change of absorption coefficient. The relationship between band gap of silicon and grain size was put forward by BUUREN T. VAN et al [14] .…”

Section: Resultsmentioning

confidence: 99%

Modification of Optical Band-Gap of Si Films After Ion Irradiation

Zhu

Sun

Chen

et al. 2012

Plasma Sci. Technol.

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Amorphous silicon (a-Si), nanocrystalline silicon (nc-Si) and hydrogenated nanocrystalline silicon (nc-Si:H) films were fabricated by using chemical vapor deposition (CVD) system. The a-Si and nc-Si thin films were irradiated with 94 MeV Xe-ions at fluences of 1.0 × 10 11 ions/cm 2 , 1.0 × 10 12 ions/cm 2 and 1.0 × 10 13 ions/cm 2 at room temperature (RT). The nc-Si:H films were irradiated with 9 MeV Xe-ions at 1.0 × 10 12 Xe/cm 2 , 1.0 × 10 13 Xe/cm 2 and 1.0×10 14 Xe/cm 2 at RT. For comparison, mono-crystalline silicon (c-Si) samples were also irradiated at RT with 94 MeV Xe-ions. All samples were analyzed by using an UV/VIS/NIR spectrometer and an X-ray powder diffractometer. Variations of the optical band-gap (Eg) and grain size (D) versus the irradiation fluence were investigated systematically. The obtained results showed that the optical band-gaps and grain size of the thin films changed dramatically whereas no observable change was found in c-Si samples after Xe-ion irradiation. Possible mechanism underlying the modification of silicon thin films was briefly discussed.

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Section: Resultsmentioning

confidence: 99%

Modification of Optical Band-Gap of Si Films After Ion Irradiation

Zhu

Sun

Chen

et al. 2012

Plasma Sci. Technol.

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“…The application of RF-PECVD at 13.56MHz to this strategy through the high-rate (HR) deposition of hydrogenated polymorphous silicon (pm-Si:H) has recently been demonstrated to result in device quality material [1]. The application of RF-PECVD at 13.56MHz to this strategy through the high-rate (HR) deposition of hydrogenated polymorphous silicon (pm-Si:H) has recently been demonstrated to result in device quality material [1].…”

Section: Introductionmentioning

confidence: 99%

In-Situ Observation of High Deposition Rate Hydrogenated Polymorphous Silicon Cell Degradation through Variable Intensity Method Measurements

2009

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The efficiencies of hydrogenated polymorphous silicon (pm-Si:H) solar cells have been previously demonstrated to show superior stability under light-soaking. This stability arises due to the fact that the decrease they show in fill factor (FF) is partially offset by an accompanying increase in open circuit voltage (V OC ). Recently, high-deposition rate (9Å/s) pm-Si:H material deposited by standard RF-PECVD at 13.56MHz has been investigated as the intrinsic layer in photovoltaic modules as it has shown excellent electronic properties. The degradation behaviour of these high-deposition rate cells, however, differs significantly from that of lower deposition rate material. In particular, no beneficial increase in Voc is observed during light soaking. We investigate the degradation dynamics of solar cells made from this high growth rate material using a Variable Illumination Method (VIM) during light soaking to quantify the changes to these high-rate cells during light-soaking and directly contrast them with those of low-rate (1.5Å/s) cells. In particular, we discuss the importance of bulk recombination effects vs interface quality changes, as well as the dynamics of changes in V OC .

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Structural and electronic properties of hydrogenated polymorphous silicon films deposited at high rate

Soro

Gueunier‐Farret

Kleider

2011

Journal of Applied Physics

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LGEP 2011 ID = 715International audienceStructural and electronic defect-related properties of hydrogenated polymorphous silicon (pm-Si:H) films deposited at high rates of up to 9 Å/s have been investigated. Raman spectroscopy reveals the usual peaks characteristic of the amorphous nature of the material, as well as intermediate peaks associated with the effect of nanocrystallites in the amorphous matrix. These results have been correlated with infrared measurements. Transport and defect-related properties deduced from a set of complementary techniques show that hydrogenated polymorphous silicon presents better properties compared to the standard amorphous silicon (a-Si:H). In particular, capacitance measurements on Schottky diodes reveal a very low density of states at the Fermi level. Based on experimental results, band gap states modeling has been achieved for pm-Si:H and a-Si:H by means of a numerical calculation software. Some parameters that are not directly measured with experiments, such as capture cross sections, could be deduced from simulations and differences between pm-Si:H and a-Si:H could be further revealed

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Polymorphous silicon thin films deposited at high rate: Transport properties and density of states

Cited by 5 publications

References 9 publications

Modification of Optical Band-Gap of Si Films After Ion Irradiation

Modification of Optical Band-Gap of Si Films After Ion Irradiation

In-Situ Observation of High Deposition Rate Hydrogenated Polymorphous Silicon Cell Degradation through Variable Intensity Method Measurements

Structural and electronic properties of hydrogenated polymorphous silicon films deposited at high rate

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