Polymorphous GdScO 3 as high permittivity dielectric

Schäfer, A.; Rahmanizadeh, K.; Bihlmayer, Gustav; Luysberg, M.; Besmehn, Astrid; Fox, A.; Schnee, Michael; Niu, Gang; Schroeder, Thomas; Mantl, S.; Hardtdegen, H.; Mikulics, M.; Schubert, J.

doi:10.1016/j.jallcom.2015.08.135

Cited by 11 publications

(5 citation statements)

References 39 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The lattice constants are determined using -2Θ scans and were calculated by a Nelson-Riley(21) plot. (11)(12)(13)(14)(15) A -scan reveals the symmetry of the crystal. The lattice structure and the interface between the layer and the substrate were investigated by high resolution transmission electron microscopy (HRTEM) and electron diffraction patterns (DP) using a FEI Tecnai G2 microscope and an aberration corrected FEI Titan 80-300 transmission electron microscope.…”

Section: Methodsmentioning

confidence: 99%

“…The layer roughness was measured by atomic force microscopy (AFM) by a Digital Instruments Nanoscope IIIa AFM in tapping mode. (11)(12)(13)(14)(15) The band gap (EG) investigation was performed by X-ray photoelectron spectroscopy (XPS) with a PHI Versa Probe II system equipped with a monochromatic Al Kα X-ray source and determined following the method of Miyazaki (22). Top contacts in particular Au, Pt and Al were deposited via a shadow mask by electron beam evaporation for electrical characterization.…”

Section: Methodsmentioning

confidence: 99%

“…Capacitance equivalent thickness (CET) plots were deduced to determine the permittivity (). (11)(12)(13)(14)(15) Structural characterization of LaLuO3 LLO amorphous. An XRD scan of LLO deposited at RT reveals that the grown film is amorphous, as no reflections of a crystalline phase are detected.…”

Section: Methodsmentioning

confidence: 99%

“…All LLO and GSO films were deposited by pulsed laser deposition as described elsewhere (11)(12)(13)(14)(15). The amorphous LLO layers were deposited on p-type (100) Si at room temperature (RT).…”

Section: Methodsmentioning

confidence: 99%

“…A smooth surface with an rms of 1 Å is measured. (16) The band gap of amorphous GSO is 5.8 ± 0.4 eV (13).…”

Section: Electrical Characterization Of Laluo3mentioning

confidence: 99%

See 4 more Smart Citations

(Invited) Ternary Rare Earth Based Oxides for Nitride Based Devices

et al. 2016

Self Cite

View full text Add to dashboard Cite

Ternary rare earth oxides are promising candidates for future gate oxides. Therefore GdScO3 and LaLuO3 were investigated with regard to their suitability as gate dielectric. The layers were deposited by pulsed laser deposition and the crystal structure, stoichiometry, layer roughness and band gap were investigated. GdScO3 can be grown hexagonal and amorphous and LaLuO3 can be grown hexagonal, orthorhombic and amorphous. All investigated layers revealed smooth surfaces, exhibited band gaps higher than 5 eV and a permittivity higher than 20. These results show that GdScO3 and also LaLuO3 are promising candidates as a future gate dielectric based on nitride semiconductor devices.

show abstract