(Invited) Ternary Rare Earth Based Oxides for Nitride Based Devices

Abstract

Ternary rare earth oxides are promising candidates for future gate oxides. Therefore GdScO3 and LaLuO3 were investigated with regard to their suitability as gate dielectric. The layers were deposited by pulsed laser deposition and the crystal structure, stoichiometry, layer roughness and band gap were investigated. GdScO3 can be grown hexagonal and amorphous and LaLuO3 can be grown hexagonal, orthorhombic and amorphous. All investigated layers revealed smooth surfaces, exhibited band gaps higher than 5 eV and a permittivity higher than 20. These results show that GdScO3 and also LaLuO3 are promising candidates as a future gate dielectric based on nitride semiconductor devices.