An investigation has been carried out on silicone etch-resists which can be exposed by electron beam irradiation. Thin silicone films with a thickness of about 5000 and 10,000A were irradiated by scanning electron beam accelerated at 10 and 25 kv, over defined area. The thicknesses of silicone films after development were measured for each different irradiation charge density; thus the exposure characteristics of a few kinds of silicones were obtained. With the most sensitive silicone, methylvinylpolysiloxane, it was possible to form developed pattern with irradiation charge density 8.8 x 10 -7 coulombs/cm ~ at 10 kv. The chemical resistances of the electron beam irradiated silicone films to the chemical reagents which were thought to be the constituents of common etchants were also investigated. It has been shown that flood-beam irradiation onto the developed silicone films was effective to increase chemical resistance and adhesive force to the substrate. Such silicone resists are practically useful to almost all etchants other than sulfuric acid.