Polycrystalline-silicon thin-film transistor fabricated with Cu gate controlled morphology by plating mode

Chae, Hee Jeong; Song, Kyung Yup; Joo, Seung Ki

doi:10.1016/j.tsf.2018.07.015

Cited by 5 publications

(3 citation statements)

References 19 publications

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“…Thin-film transistor (TFT) technology has contributed to a marked improvement in industry. [1][2][3][4][5] Hydrogenated amorphous silicon (a-Si:H) TFTs, for instance, have been widely utilized in various ways. [6][7][8][9] However, devices that require higher mobility beyond that of a-Si:H TFTs lead us to a quest for alternative channel materials.…”

Section: Introductionmentioning

confidence: 99%

Investigation on electrical characteristics of TFTs fabricated with germanium films crystallized by atmospheric-pressure micro thermal plasma jet irradiation

Sato¹,

Hanafusa²,

Higashi³

2022

Jpn. J. Appl. Phys.

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Crystalline-germanium (c-Ge) is an attractive material for a thin-film transistor (TFT) channel because of its high carrier mobility and applicability to a low-temperature process. We present the electrical characteristics of c-Ge crystallized by atmospheric pressure micro-thermal-plasma-jet (µ-TPJ). The µ-TPJ crystalized c-Ge showed the maximum Hall mobility of 1070 cm2·V−1·s−1 with its hole concentration of ~ 1016 cm−3, enabling us to fabricate the TFT with field-effect mobility (μ FE) of 196 cm2·V−1·s−1 and ON/OFF ratio (R ON/OFF) of 1.4 × 104. On the other hand, RON/OFFs and μFEs were dependent on the scanning speed of the TPJ, inferring different types of defects were induced in the channel regions. These findings show not only a possibility of the TPJ irradiation as a promising method to make a c-Ge TFT on insulating substrates.

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Section: Introductionmentioning

confidence: 99%

Investigation on electrical characteristics of TFTs fabricated with germanium films crystallized by atmospheric-pressure micro thermal plasma jet irradiation

Sato¹,

Hanafusa²,

Higashi³

2022

Jpn. J. Appl. Phys.

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“…Bottom-gate thin film transistors (TFTs) have attracted much attention because of their advantages in industry. [1][2][3][4][5] By using backside exposure of photoresist on the top of the plate, the bottom-gate acts as a mask to define the channel length. 6,7) With this approach, it only needs four masks which is the smallest mask number for TFTs fabrication process.…”

Section: Introductionmentioning

confidence: 99%

Investigation on characteristics of millisecond solid-phase crystallized silicon films annealed by atmospheric pressure DC arc discharge micro-thermal-plasma-jet and their application to bottom-gate thin film transistors fabrication

Nguyêñ¹,

Hanafusa²,

Kawakita³

et al. 2021

Jpn. J. Appl. Phys.

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Millisecond solid phase crystallization (SPC) of silicon film induced by micro-thermal-plasma-jet is a potential method for small grain bottom-gate thin-film transistors (TFTs). The characteristics of millisecond SPC films under the conditions of scanning speed (v) from 500 to 900 mm s−1 were investigated. The films show good crystalline quality when formed at a slow v. The crystallinity estimated by micro-Raman spectroscopy is 61% when v was 500 mm s−1. Hall effect measurement results indicate that under v at 500 mm s−1, the resistivity is 1.36 × 10−3 Ωcm, the carrier concentration is 3.41 × 1020 cm−3, and the carrier mobility is 12.2 cm2 Vs−1. Millisecond SPC films surface reduce larger than 76% roughness compared to that of the melted film surface. Bottom-gate TFTs fabricated with millisecond SPC film, which annealed under conditions close to melted condition, show high field effect mobility of 28 cm2 Vs−1 and good uniformity.

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“…Copper films are widely used as interconnect material seed layers [1][2][3][4], for device encapsulation [5], or as components of antimicrobial coatings [6] due to their high electrical conductivity, high ductility, and biocidal nature. Such films are conveniently deposited on flat surfaces by evaporation or sputtering.…”

Section: Introductionmentioning

confidence: 99%

Chemical vapor deposition of Cu films from copper(I) cyclopentadienyl triethylphophine: Precursor characteristics and interplay between growth parameters and films morphology

et al. 2020

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The rough, even discontinuous morphology of vapor-deposited copper films inhibits their attractive electrical properties. In the present study, we investigate the influence of deposition time, deposition temperature, and the flow rate of the precursors on the morphology of Cu films deposited from metalorganic chemical vapor deposition. We show that it is necessary to purify the copper(I) cyclopentadienyl triethylphophine (CpCuPEt3) precursor in order to improve its stability and volatility. We also determined its saturated vapor pressure law, logPsat (Pa) = 4.368-2272/T (K). The Arrhenius plot of the global deposition reaction of Cu films in the presence of hydrogen between 431-523 K shows a low apparent activation energy of 10 kJ/mol. Electron probe microanalysis, grazing incidence X-Ray diffraction, and image analysis of the micrographs obtained by top-down surface scanning electron microscopy reveal metallic films composed of Cu islands. Their size and packed density increase and, ultimately, the islands coalesce with increasing precursor flow rate and, to a lesser extent, with increasing deposition temperature.

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Polycrystalline-silicon thin-film transistor fabricated with Cu gate controlled morphology by plating mode

Cited by 5 publications

References 19 publications

Investigation on electrical characteristics of TFTs fabricated with germanium films crystallized by atmospheric-pressure micro thermal plasma jet irradiation

Investigation on electrical characteristics of TFTs fabricated with germanium films crystallized by atmospheric-pressure micro thermal plasma jet irradiation

Investigation on characteristics of millisecond solid-phase crystallized silicon films annealed by atmospheric pressure DC arc discharge micro-thermal-plasma-jet and their application to bottom-gate thin film transistors fabrication

Chemical vapor deposition of Cu films from copper(I) cyclopentadienyl triethylphophine: Precursor characteristics and interplay between growth parameters and films morphology

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