2020
DOI: 10.1016/j.tsf.2020.137967
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Chemical vapor deposition of Cu films from copper(I) cyclopentadienyl triethylphophine: Precursor characteristics and interplay between growth parameters and films morphology

Abstract: The rough, even discontinuous morphology of vapor-deposited copper films inhibits their attractive electrical properties. In the present study, we investigate the influence of deposition time, deposition temperature, and the flow rate of the precursors on the morphology of Cu films deposited from metalorganic chemical vapor deposition. We show that it is necessary to purify the copper(I) cyclopentadienyl triethylphophine (CpCuPEt3) precursor in order to improve its stability and volatility. We also determined … Show more

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Cited by 6 publications
(1 citation statement)
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“…This makes Cu-based SPR sensors more environmentally friendly and safer for various applications [22]. There are several techniques for depositing thin lms of Cu, including electrochemical deposition, physical vapor deposition (PVD), chemical vapor deposition and supercritical uid chemical deposition [23][24][25][26]. The sputtering technique, a subset of PVD, is the simplest technique for metal deposition.…”
Section: Introductionmentioning
confidence: 99%
“…This makes Cu-based SPR sensors more environmentally friendly and safer for various applications [22]. There are several techniques for depositing thin lms of Cu, including electrochemical deposition, physical vapor deposition (PVD), chemical vapor deposition and supercritical uid chemical deposition [23][24][25][26]. The sputtering technique, a subset of PVD, is the simplest technique for metal deposition.…”
Section: Introductionmentioning
confidence: 99%