Investigation on characteristics of millisecond solid-phase crystallized silicon films annealed by atmospheric pressure DC arc discharge micro-thermal-plasma-jet and their application to bottom-gate thin film transistors fabrication
Abstract:Millisecond solid phase crystallization (SPC) of silicon film induced by micro-thermal-plasma-jet is a potential method for small grain bottom-gate thin-film transistors (TFTs). The characteristics of millisecond SPC films under the conditions of scanning speed (v) from 500 to 900 mm s−1 were investigated. The films show good crystalline quality when formed at a slow v. The crystallinity estimated by micro-Raman spectroscopy is 61% when v was 500 mm s−1. Hall effect measurement results indicate that under v at… Show more
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