2006
DOI: 10.1016/j.pcrysgrow.2006.09.001
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Polycrystalline CdTe thin films for photovoltaic applications

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Cited by 194 publications
(167 citation statements)
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“…XRD analysis shows cubic (111) CdTe diffraction as the preferred orientation of all the CdTe explored in this work, while, the highest diffraction intensity were observed at 1360 mV under both as-deposited and CdCl 2 treated conditions. After CdCl 2 treatment, an improvement in the absorption edge slope was observed with the highest slope signifying highest CdTe quality [20,32] was observed at 1360 mV. Morphologically, better glass/FTO substrate coverage was observed at Cd-rich CdTe layer grown at 1400 mV while Te-rich layer grown at 1330 mV show high pinhole density.…”
Section: Resultsmentioning
confidence: 97%
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“…XRD analysis shows cubic (111) CdTe diffraction as the preferred orientation of all the CdTe explored in this work, while, the highest diffraction intensity were observed at 1360 mV under both as-deposited and CdCl 2 treated conditions. After CdCl 2 treatment, an improvement in the absorption edge slope was observed with the highest slope signifying highest CdTe quality [20,32] was observed at 1360 mV. Morphologically, better glass/FTO substrate coverage was observed at Cd-rich CdTe layer grown at 1400 mV while Te-rich layer grown at 1330 mV show high pinhole density.…”
Section: Resultsmentioning
confidence: 97%
“…As shown in Fig. 6, the growth of CdTe at 1360 mV shows the sharpest absorption edge which signifies superior CdTe layer [20], while the growth of CdTe layer away from 1360 mV shows a reduction in the slope of the optical absorption edge in both the as-deposited and CdCl 2 treated CdTe layers due to Cd-or Te-richness in CdTe. It should be noted that CdCl 2 treatment utilised in this work increases the sharpness of the absorption edge across all growth voltages explored.…”
Section: Optical Absorption Studymentioning
confidence: 89%
“…There are numerous studies on the CdCl 2 treatment of CdTe layers and both material changes and device improvements have been reported [35,[49][50][51]. Depending on the studies carried out, various changes such as (a) re-crystallisation and grain growth, (b) interactions at CdS/CdTe interface, (c) enhancement of lifetime of charge carriers, (d) passivation of grain boundaries and (e) enhancement of device efficiencies are reported in the literature [4,52].…”
Section: Summary Of Reported Results On Cdcl 2 Treatmentmentioning
confidence: 99%
“…XRD measurements show that (111) preferred orientation for CdTe grown by low temperature techniques like ED and sputtering. Literature also reports columnar growth of CdTe when other growth techniques are used [49,66]. This must be due to the natural preference of the FTO/CdTe or FTO/CdS/CdTe interfaces, or the preferred CdTe growth direction.…”
Section: Grain Boundary Enhanced Pv Effectmentioning
confidence: 99%
“…CdTe in the shape of thin film can be polycrystalline or nanocrystalline, which can contribute towards the change of its characteristics [4]- [6]. Different methods are used for the preparation of thin films of CdTe, including electrodeposition [4], [7], [8], magnetron sputtering [9], [10], thermal evaporation [5], [11], close space sublimation [12] - [14] and others [15], [16].…”
Section: Introductionmentioning
confidence: 99%