Polarizing and depolarizing charge injection through a thin dielectric layer in a ferroelectric–dielectric bilayer

Park, Hyeon Woo; Hyun, Seung Dam; Lee, In Su; Lee, Suk Hyun; Lee, Yong Bin; Oh, Minsik; Kim, Beom Yong; Ryoo, Seung Gyu; Hwang, Cheol Seong

doi:10.1039/d0nr07597c

Cited by 33 publications

(32 citation statements)

References 73 publications

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“…In HZO-O 2 * an additional interfacial oxide is present which acts as an activation barrier for domain nucleation due to the voltage drop across the ferroelectric. While this effect is prominent for short waiting times, at a critical time ∼5 × 10 –4 s, enough charge injection into the interfacial layer has occurred that the field becomes saturated; as a result, polarization switching becomes less dependent on applied field. , In addition, the TiO x layer not only acts as a physical resistive element, reducing the voltage drop across the ferroelectric, but it also breaks the influence of the 001 texture in the underlying TiN on the HZO film texture. As was reported by Lee et al, the spontaneous polarization vector is tilted 55° away from normal in 111-textured domains in HZO films, whereas in 001-textured HZO films, the spontaneous polarization of domains is parallel to the normal direction .…”

Section: Resultsmentioning

confidence: 99%

Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia–Zirconia Thin Films

Hsain

Lee

Lancaster

et al. 2022

ACS Appl. Mater. Interfaces

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Hafnia–zirconia (HfO2–ZrO2) solid solution thin films have emerged as viable candidates for electronic applications due to their compatibility with Si technology and demonstrated ferroelectricity at the nanoscale. The oxygen source in atomic layer deposition (ALD) plays a crucial role in determining the impurity concentration and phase composition of HfO2–ZrO2 within metal–ferroelectric–metal devices, notably at the Hf0.5Zr0.5O2 /TiN interface. The interface characteristics of HZO/TiN are fabricated via sequential no-atmosphere processing (SNAP) with either H2O or O2-plasma to study the influence of oxygen source on buried interfaces. Time-of-flight secondary ion mass spectrometry reveals that HZO films grown via O2-plasma promote the development of an interfacial TiO x layer at the bottom HZO/TiN interface. The presence of the TiO x layer leads to the development of 111-fiber texture in HZO as confirmed by two-dimensional X-ray diffraction (2D-XRD). Structural and chemical differences between HZO films grown via H2O or O2-plasma were found to strongly affect electrical characteristics such as permittivity, leakage current density, endurance, and switching kinetics. While HZO films grown via H2O yielded a higher remanent polarization value of 25 μC/cm2, HZO films grown via O2-plasma exhibited a comparable P r of 21 μC/cm2 polarization and enhanced field cycling endurance limit by almost 2 orders of magnitude. Our study illustrates how oxygen sources (O2-plasma or H2O) in ALD can be a viable way to engineer the interface and properties in HZO thin films.

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Section: Resultsmentioning

confidence: 99%

Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia–Zirconia Thin Films

Hsain

Lee

Lancaster

et al. 2022

ACS Appl. Mater. Interfaces

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“…Both works acknowledged the role of the injected charge (more precisely, the change with FE polarization switching) involved at the DE/FE interface, which was described previously by Jiang et al. [ 26,27 ] (called the tunnel‐switch mechanism). In this mechanism, the FE bound charge compensation, with which the intervening thin DE layer was supposed to interfere, could be achieved fluently using the trapped charges at the DE/FE interface, which could be varied synchronously by polarization switching via the tunneling mechanism.…”

Section: Introductionmentioning

confidence: 91%

Negative Capacitance from the Inhomogenous Stray Field in a Ferroelectric–Dielectric Structure

Park

Hwang

2022

Adv Funct Materials

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The phenomenological Landau–Ginzburg–Devonshire model provides a fundamental background for an understanding of the peculiar charge–voltage behavior of ferroelectric (FE) materials. However, the model cannot explain the polarization behavior of multidomain FE materials. The experimentally observed negative capacitance (NC) effect, which is interpreted as an emergence of the Landau barrier effect, involves particular conceptual difficulty. This work provides a new conceptual framework to explain the quasi‐static NC effect based on the energy formula for a stacked dielectric/ferroelectric (DE/FE) layer structure with the multidomain configuration with arbitrary shape. The presence of such domain configuration causes the energy–displacement curve of the inhomogenous Helmholtz energy term to have negative curvature. This is caused by the stray field between the neighboring domains. The model can be further extended to the DE/FE system with polycrystalline FE grains using the advanced phase‐field analysis. It is determined that the NC effect from the stray field is a universal phenomenon. These models provide quantitative explanations for the previously reported short‐pulse measurement results for various DE/FE material systems, which have lacked accurate interpretations.

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“…Degradation of the dead layer or charge trapping due to the presence of this layer could result in stabilization of the domains or of the ferroelectric phase. [ 114 ]…”

Section: Microstructure and Domain Dynamicsmentioning

confidence: 99%

Review on the Microstructure of Ferroelectric Hafnium Oxides

Lederer

Lehninger

Ali

et al. 2022

Physica Rapid Research Ltrs

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Ferroelectric hafnium oxide is of major interest for a multitude of applications in microelectronics, ranging from neuromorphic devices to actuators and sensors. While the electrical performance is commonly discussed in depth, the influence of the microstructure is often disregarded. However, in recent years, more research groups shed light into the microstructural background of ferroelectric behavior in hafnium oxide films. To give a more general and complete picture of the different influences on the microstructure and its relevance for the applications, the process and stack influences on the microstructure are reviewed and summarized. While a few mechanisms are not yet understood in depth, a coherent picture on the formation of the microstructure in ferroelectric hafnium oxide layers can be gained.

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Polarizing and depolarizing charge injection through a thin dielectric layer in a ferroelectric–dielectric bilayer

Abstract: Charge injection meditated switching of the ferroelectric–dielectric bilayer is quantitatively investigated by the compact model and newly introduced pulse measurement.

Cited by 33 publications

References 73 publications

Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia–Zirconia Thin Films

Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia–Zirconia Thin Films

Negative Capacitance from the Inhomogenous Stray Field in a Ferroelectric–Dielectric Structure

Review on the Microstructure of Ferroelectric Hafnium Oxides

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