Polarized Raman scattering from single<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>GaN</mml:mi></mml:mrow></mml:math>nanowires

Livneh, Tsachi; Zhang, Jinping; Cheng, Guosheng; Moskovits, Martin

doi:10.1103/physrevb.74.035320

Cited by 109 publications

(101 citation statements)

References 34 publications

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“…[7][8][9][10] In this paper, we use first-order polarized Raman scattering and resonant Raman scattering to investigate single InAs nanowires. First-order polarized Raman scattering have been recently used to investigate GaN, 11,12 GaAs, 13,14 GaP, 15 ZnO, 16 RuO 2 , 17 and CdS (Ref. 18) single one-dimensional nanostructures.…”

Section: Introductionmentioning

confidence: 99%

Polarized and resonant Raman spectroscopy on single InAs nanowires

et al. 2011

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We report polarized Raman scattering and resonant Raman scattering studies on single InAs nanowires. Polarized Raman experiments show that the highest scattering intensity is obtained when both the incident and analyzed light polarizations are perpendicular to the nanowire axis. InAs wurtzite optical modes are observed. The obtained wurtzite modes are consistent with the selection rules and also with the results of calculations using an extended rigid-ion model. Additional resonant Raman scattering experiments reveal a redshifted E 1 transition for InAs nanowires compared to the bulk zinc-blende InAs transition due to the dominance of the wurtzite phase in the nanowires. Ab initio calculations of the electronic band structure for wurtzite and zinc-blende InAs phases corroborate the observed values for the E 1 transitions.

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Section: Introductionmentioning

confidence: 99%

Polarized and resonant Raman spectroscopy on single InAs nanowires

et al. 2011

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“…Special care was taken to ensure that the nanowires were not heated. 30,52 A series of measurements with increasing the excitation power was realized in order to choose the excitation regime, which was well below to the threshold under which heating effects were observed. The scattered light was collected by an XY RamanDilor triple spectrometer with a multichannel charge couple device detector.…”

Section: Methodsmentioning

confidence: 99%

“…Indeed, the highly anisotropic shape of the nanowires can lead to angular dependencies of the modes, which otherwise would not be expected from the selection rules. [29][30][31] Additionally, modes such as the ones associated with surface phonons have been detected. [32][33][34][35] In this work, scanning Raman spectroscopy is performed on GaAs nanowires with zinc-blende and wurtzite structures.…”

Section: Introductionmentioning

confidence: 99%

Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: Polarization dependence, selection rules, and strain effects

et al. 2009

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Polarization-dependent Raman scattering experiments realized on single GaAs nanowires with different percentages of zinc-blende and wurtzite structure are presented. The selection rules for the special case of nanowires are found and discussed. In the case of zinc-blende, the transversal optical mode E 1 ͑TO͒ at 267 cm −1 exhibits the highest intensity when the incident and analyzed polarization are parallel to the nanowire axis. This is a consequence of the nanowire geometry and dielectric mismatch with the environment, and in quite good agreement with the Raman selection rules. We also find a consistent splitting of 1 cm −1 of the E 1 ͑TO͒. The transversal optical mode related to the wurtzite structure, E 2 H , is measured between 254 and 256 cm −1 , depending on the wurtzite content. The azimuthal dependence of E 2 H indicates that the mode is excited with the highest efficiency when the incident and analyzed polarization are perpendicular to the nanowire axis, in agreement with the selection rules. The presence of strain between wurtzite and zinc-blende is analyzed by the relative shift of the E 1 ͑TO͒ and E 2 H modes. Finally, the influence of the surface roughness in the intensity of the longitudinal optical mode on ͕110͖ facets is presented.

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“…[7][8][9][10][11] Polarized Raman measurements have also been carried out on single NWs unambiguously identifying the NW's growth direction and comparing the results with those obtained using electron diffraction. [12][13][14][15][16] As with electron microscopy, Raman spectroscopy can be used as a real-time probe under a broad range of experimental conditions. In this letter, we report the use of polarized Raman scattering as a rapid and reliable method for determining the growth direction of a single RuO 2 NW.…”

Section: -4mentioning

confidence: 99%

“…Polarization-dependent Raman spectra were measured by rotating a half-wave plate in 10°increments, changing the angle, , between the electric vector of the incident light and the long axis of a NW as described in Ref. 13 and shown in Fig. 1͑a͒.…”

Section: -4mentioning

confidence: 99%

Growth direction determination of a single RuO2 nanowire by polarized Raman spectroscopy

Kim

Baik

Lee

et al. 2010

Applied Physics Letters

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The dependence of band intensities in the Raman spectrum of individual single-crystal ruthenium dioxide (RuO2) nanowires on the angle between the plane of polarization of the exciting (and collected) light and the long axis of the nanowire, is shown to be a simple, complementary technique to high resolution transmission electron microscopy (HRTEM) for determining nanowire growth direction. We show that excellent agreement exists between what is observed and what is predicted for the polarization angle dependence of the intensities of the nanowires’ Eg (525 cm−1) and the B2g (714 cm−1) Raman bands, only by assuming that the nanowires grow along the (001) crystallographic direction, as confirmed by HRTEM.

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Polarized Raman scattering from singleGaNnanowires

Cited by 109 publications

References 34 publications

Polarized and resonant Raman spectroscopy on single InAs nanowires

Polarized and resonant Raman spectroscopy on single InAs nanowires

Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: Polarization dependence, selection rules, and strain effects

Growth direction determination of a single RuO2 nanowire by polarized Raman spectroscopy

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