Polarized light emission from antiphase boundaries acting as slanting quantum wells inGaP∕InPshort-period superlattices

Abstract

Optical properties of anti-phase boundaries ͑APBs͒ in monolayer superlattices of GaP/ InP are studied. Determining selectively the arrangements of In and Ga atoms around APBs by cross-sectional scanning tunneling microscopy, it is found that atomic layers of InP on ͑111͒ and ͑110͒, sandwiched between the domains of superlattices, are formed on APBs. Polarized cathodoluminescence spectroscopy in a transmission electron microscope suggested that the InP layers act as quantum wells oriented on a slant with respect to the substrate and they emit light linearly polarized parallel to the layers.

Intense Monochromatic Light Emission from Multiple Nanoscale Twin Boundaries in Indirect-gap AlGaAs Epilayers

“…3, the monochromatic light was emitted from the area in which a number of twin boundaries on ( " 1 1 " 1 11) were arranged at narrow (about 5 nm) intervals but the number of twin boundaries on (111) was rather small. Analyzing 20) the CL intensities measured with different experimental setups, it was found that the CL light is in-plane polarized on ( " 1 1 " 1 11). Namely, the light was polarized parallel to a set of twin boundaries on ( " 1 1 " 1 11).…”

In-Situ Analysis of Optoelectronic Properties of Semiconductor Nanostructures and Defects in Transmission Electron Microscopes

“…Also, the techniques have been used to assess the carrier dynamics such as excited carrier paths towards the lower energy states (e.g., Akiba et al, 2004, Merano et al, 2005, Sonderegger et al, 2006, as well as carrier lifetimes. Some extended defects such as dislocations (Yamamoto et al, 1984, Mitsui & Yamamoto, 1997, twins (Ohno et al, 2007b), platelets (Ohno, 2005a) and strains induced by a uniaxial stress , Ohno, 2005b, as well as low-dimensional nanostructures such as nanowires (Ishikawa et al, 2008, Yamamoto et al, 2006, quantum wells (Ohno, 2005a) and superlattices (Ohno & Takeda, 2002, Ohno et al, 2007b, form anisotropic defect levels, and electronic transitions via the levels result in the emission of polarized CL lights. CL polarization analyses have helped us to assess quantitatively the atomistic structures of such nanostructures and defects.…”