Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots

Winkelnkemper, Momme; Seguin, R.; Rodt, Sven; Schliwa, A.; Reißmann, L.; Strittmatter, A.; Hoffmann, A.; Bimberg, D.

doi:10.1063/1.2743893

Cited by 48 publications

(80 citation statements)

References 26 publications

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“…Referring to our excitation/detection geometry, the linearly polarized emission can be ascribed to the in-plane anisotropy of the QD confinement potential. 22,23 Thus, our experimental results imply that the in-plane anisotropies of all the InGaN QDs on the same EHP are simultaneously aligned. Moreover, the magnitude of in-plane anisotropy should be significant to achieve the observed high degree of polarization.…”

Section: Multiple Ingan Qds On a Gan Ehpmentioning

confidence: 53%

“…22,23 In these reports, the preferential polarization directions were not understood. A unidirectional strain induced by the underlying layers to the overgrown QDs was given as a plausible explanation.…”

Section: The Origin Of Polarization Guidingmentioning

confidence: 97%

“…32,33 This is related to the intrinsic valence band structure of the III-Ns. To reach P>0.95, an in-plane shape elongation of 1.25 : 1 is needed for an InGaN QD, 23,33 while a corresponding aspect ratio of 2.5 : 1 is needed for GaN QDs. 32 In particular, we have identified the split-off energy as the key material parameter determining the degree of polarization for a given asymmetry.…”

Section: Qd Emission With Controllable Polarization Direction a Lundsmentioning

confidence: 99%

“…The polarization direction of the ground-state-related emission from the QDs reflects the axis of in-plane anisotropy of the confining potential, concerning both strain and/or QD shape. 22,23 The same polarization direction for different QDs indicates that all grown QDs possess the same unidirectional in-plane anisotropy. Such simultaneous alignment of multiple QDs with controllable orientations has not been reported up to now to the best of our knowledge.…”

Section: Introductionmentioning

confidence: 96%

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Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots

et al. 2014

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Semiconductor quantum dots (QDs) have been demonstrated viable for efficient light emission applications, in particular for the emission of single photons on demand. However, the preparation of QDs emitting photons with predefined and deterministic polarization vectors has proven arduous. Access to linearly polarized photons is essential for various applications. In this report, a novel concept to directly generate linearly-polarized photons is presented. This concept is based on InGaN QDs grown on top of elongated GaN hexagonal pyramids, by which the predefined elongation determines the polarization vectors of the emitted photons from the QDs. This growth scheme should allow fabrication of ultracompact arrays of photon emitters, with a controlled polarization direction for each individual emitter. Keywords: GaN; InGaN; photoluminescence; polarized emission; quantum dot INTRODUCTION Quantum dots (QDs) have validated their important role in current optoelectronic devices and they are also seen promising as light sources for quantum information applications. An improved efficiency of laser diodes and light-emitting diodes can be achieved by the incorporation of QDs ensembles in the optically active layers.1 In addition, the proposed quantum computer applications rely on photons with distinct energy and polarization vectors, which can be seen as the ultimate demand on photons emitted from individual QDs.2 A common requirement raised for several optoelectronic applications, e.g., liquid-crystal displays, three-dimensional visualization, (bio)-dermatology 3 and the optical quantum computers, 4 is the need of linearly polarized light for their operation. For existing applications, the generation of linearly polarized light is obtained by passing unpolarized light through a combination of polarization selective filters and waveguides, with an inevitable efficiency loss as the result. These losses can be drastically reduced by employment of sources, which directly generate photons with desired polarization directions.Conventional QDs grown via the Stranski-Krastanov (SK) growth mode are typically randomly distributed over planar substrates and possess different degrees of anisotropies. The anisotropy in strain field and/or geometrical shape of each individual QD determines the polarization performance of the QD emission. Accordingly, a cumbersome post-selection of QDs with desired polarization properties among the randomly distributed QDs is required for device integration.

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Section: Multiple Ingan Qds On a Gan Ehpmentioning

confidence: 53%

Section: The Origin Of Polarization Guidingmentioning

confidence: 97%

Section: Qd Emission With Controllable Polarization Direction a Lundsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 96%

See 2 more Smart Citations

Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots

et al. 2014

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“…Such a behavior has not been observed before in nitrides. In [52], the electronic structure was modeled by realistic eight-band k · p calculations. The model includes piezoelectric and pyroelectric effects as well as crystal-field splitting and spin-orbit interaction.…”

Section: Single Dot Spectroscopymentioning

confidence: 99%

Optical Properties of III–V Quantum Dots

Pohl¹,

Rodt²,

Hoffmann³

2008

Semiconductor Nanostructures

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Flying qubits and entangled photons

Unrau

Bimberg²

2013

Laser & Photonics Reviews

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Efficient generation of polarized single photons or entangled photon pairs is crucial for the implementation of quantum key distribution (QKD) systems. Self organized semiconductor quantum dots (QDs) are capable of emitting on demand one polarized photon or an entangled photon pair upon current injection. Highly efficient single-photon sources consist of a pin structure inserted into a microcavity where single electrons and holes are funneled into an InAs QD via a submicron AlOx aperture, leading to emission of single polarized photons with record purity of the spectrum and non-classicality of the photons. A new QD site-control technique is based on using the surface strain field of an AlO x current aperture below the QD. GaN/AlN QD based devices are promising to operate at room temperature and reveal a fine-structure splitting (FSS) depending inversely on the QD size. Large GaN/AlN QDs show disappearance of the FSS. Theory also suggests QDs grown on (111)-oriented GaAs substrates as source of entangled photon pairs.

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Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots

Cited by 48 publications

References 26 publications

Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots

Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots

Optical Properties of III–V Quantum Dots

Flying qubits and entangled photons

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