Polarization-independent electroabsorption modulator integrated with spot-size converters

Devaux, F.; Menigaux, L.; Brandon, J.; Ramus, C.; Carre, M.; Huet, F.; Legay, P.; Juhel, M.

doi:10.1109/ofc.1996.908232

Cited by 3 publications

(1 citation statement)

References 2 publications

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“…For the passive section, QWI is selectively used to make its bandgap blue-shifted from the EAM material to reduce the direct inter-valence band absorption loss [8] . By contrast with butt-joint and selective area growth (SAG) techniques, QWI allows for postgrowth tuning of the QW band edge in a relatively simple procedure and it does not change the average composition, but only slightly changes the compositional profile with a negligible index discontinuity at the interface between adjacent sections.…”

Section: Introductionmentioning

confidence: 99%

High-performance electroabsorption modulator

et al. 2009

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A 100-μm-long electroabsorption modulator monolithically integrated with passive waveguides at the input and output ports is fabricated through ion implantation induced quantum well intermixing, using only a two-step low-pressure metal-organic vapor phase epitaxial process. An InGaAsP/InGaAsP intra-step quantum well is introduced to the active region to improve the modulation properties. In the experiment high modulation speed and high extinction ratio are obtained simultaneously, the electrical-to-optical frequency response (E/O response) without any load termination reaches to 22 GHz, and extinction ration is as high as 16 dB.

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Section: Introductionmentioning

confidence: 99%