We demonstrate a novel (to the best of our knowledge) 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm laser with a low divergence angle (12.7°×26.3°), timing jitter of 1.2 ps (10 kHz-100 MHz), and a radio frequency linewidth of 25 kHz.

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Multi-wavelength semiconductor laser arrays (MLAs) have wide applications in wavelength multiplexing division (WDM) networks. In spite of their tremendous potential, adoption of the MLA has been hampered by a number of issues, particularly wavelength precision and fabrication cost. In this paper, we report high channel count MLAs in which the wavelengths of each channel can be determined precisely through low-cost standard μm-level photolithography/holographic lithography and the reconstruction-equivalent-chirp (REC) technique. 60-wavelength MLAs with good wavelength spacing uniformity have been demonstrated experimentally, in which nearly 83% lasers are within a wavelength deviation of ±0.20 nm, corresponding to a tolerance of ±0.032 nm in the period pitch. As a result of employing the equivalent phase shift technique, the single longitudinal mode (SLM) yield is nearly 100%, while the theoretical yield of standard DFB lasers is only around 33.3%.

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