Low divergence angle and low jitter 40 GHz AlGaInAs/InP 155 μm mode-locked lasers

Hou, Lianping; Haji, Mohsin; Akbar, Jehan; Qiu, Bocang; Bryce, A.C.

doi:10.1364/ol.36.000966

Cited by 46 publications

(46 citation statements)

References 9 publications

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“…• , and the 1-dB misalignment tolerance is ±1.7 μm (horizonwww.lphys.org tal and vertical direction) with a 1-dB optical-axis direction alignment tolerance of 8.3 μm [12]. When we increase the ridge waveguide height from 1.65 to 1.85 μm for the 3-QW laser, the asymmetry of the FFP is greatly improved (see Fig.…”

Section: ×351mentioning

confidence: 99%

80-GHz AlGaInAs/InP 1.55µm colliding-pulse mode-locked laser with low divergence angle and timing jitter

Hou

Haji

et al. 2011

Laser Phys. Lett.

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We present an 80‐GHz λ ∼ 1.55 µm passively colliding‐pulse mode‐locked laser based on a novel AlGaInAs/InP epitaxial structure, which consists of a strained 3‐quantum‐well active layer incorporated with a passive far‐field reduction layer. The device generated 910 fs pulses with a state‐of‐art timing jitter value of 190 fs (4–80 MHz), while demonstrating a low divergence angle (12.7°×26.3°) with two fold butt coupling efficiency to a flat cleaved single mode fiber when compared with the conventional mode‐locked laser. (© 2011 by Astro Ltd., Published exclusively by WILEY‐VCH Verlag GmbH & Co. KGaA) (© 2011 by Astro Ltd., Published exclusively by WILEY‐VCH Verlag GmbH & Co. KGaA)

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Section: ×351mentioning

confidence: 99%

80-GHz AlGaInAs/InP 1.55µm colliding-pulse mode-locked laser with low divergence angle and timing jitter

Hou

Haji

et al. 2011

Laser Phys. Lett.

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“…The number of QWs was reduced from five to three in order to decrease the differential gain. Furthermore, a passive far field reduction layer (FRL) was inserted in the lower n-type cladding layer to expand the modal spot size [16]. The modal expansion caused by the FRL has two main advantages: first, it decreases the output beam divergence angle and hence improve the coupling to single mode fibers; second, it reduces the confinement factor Γ and therefore decreases the spontaneous emission coupling factor and further increases the saturation energy.…”

Section: Pulsewidth and Chirpmentioning

confidence: 99%

High-Power and Low-Noise Mode-Locking Operation of Al-Quaternary Laser Diodes

Stolarz

Pusino

Akbar

et al. 2015

IEEE J. Select. Topics Quantum Electron.

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REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < 1Abstract-We report on the design and experimental evaluation of AlGaInAs/InP multi-quantum-well epi-structures for modelocked emission at 1.5-μm. We show that mode-locked lasers fabricated on an optimized 3 quantum-well active region with a low optical confinement factor deliver pulses with increased peak power and stability over a much wider biasing range than those fabricated using a standard 5 quantum well design. Sonogram measurements indicate that sub-ps symmetrical pulses with a substantially reduced linear blue chirp are generated up to nearly three times the laser current threshold.

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“…The material used was a MQW AlGaInAs/InP wafer structure, and a detailed description of the epitaxial layers can be found in [10]. This particular material was chosen because its ML behavior is well understood and documented, thanks to extensive characterization carried out previously [6].…”

Section: Device Design and Fabricationmentioning

confidence: 99%

Passive mode-locking in semiconductor lasers with saturable absorbers bandgap shifted through quantum well intermixing

Pusino¹,

Strain²,

Sorel³

2014

Photon. Res.

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Passive mode-locking in semiconductor lasers in a Fabry-Perot configuration with a bandgap blueshift applied to the saturable absorber (SA) section has been experimentally characterized. For the first time a fully post-growth technique, quantum well intermixing, was adopted to modify the material bandgap in the SA section. The measurements showed not only an expected narrowing of the pulse width but also a significant expansion of the range of bias conditions generating a stable train of optical pulses. Moreover, the pulses from lasers with bandgap shifted absorbers presented reduced chirp and increased peak power with respect to the nonshifted case.

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Low divergence angle and low jitter 40 GHz AlGaInAs/InP 155 μm mode-locked lasers

Abstract: We demonstrate a novel (to the best of our knowledge) 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm laser with a low divergence angle (12.7°×26.3°), timing jitter of 1.2 ps (10 kHz-100 MHz), and a radio frequency linewidth of 25 kHz.

Cited by 46 publications

References 9 publications

80-GHz AlGaInAs/InP 1.55µm colliding-pulse mode-locked laser with low divergence angle and timing jitter

80-GHz AlGaInAs/InP 1.55µm colliding-pulse mode-locked laser with low divergence angle and timing jitter

High-Power and Low-Noise Mode-Locking Operation of Al-Quaternary Laser Diodes

Passive mode-locking in semiconductor lasers with saturable absorbers bandgap shifted through quantum well intermixing

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