High-Power and Low-Noise Mode-Locking Operation of Al-Quaternary Laser Diodes

Abstract

REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < 1Abstract-We report on the design and experimental evaluation of AlGaInAs/InP multi-quantum-well epi-structures for modelocked emission at 1.5-μm. We show that mode-locked lasers fabricated on an optimized 3 quantum-well active region with a low optical confinement factor deliver pulses with increased peak power and stability over a much wider biasing range than those fabricated using a standard 5 quantum well design. Sonogram measurements indicate that sub-ps symmetrical pulses with a substantially reduced linear blue chirp are generated up to nearly three times the laser current threshold.

Spectral dynamical behavior in two-section, quantum well, mode-locked laser at 1.064 μm

“…[12,13] Researchers have been investigating two-section modelocked lasers for years. Several optimized structures [14,15] and the corresponding models have been developed. [16,17] Recently, mode-locked regimes, noise characteristics, pulse widths, and output powers of these monolithically fabricated lasers have been studied and demonstrated in detail.…”

Generation of optical picosecond pulses with monolithic colliding‐pulse mode‐locked lasers containing a chirped double‐quantum‐well active region

“…Typically, techniques for the generation of pulses in the picosecond range (50–1000 ps) with diode lasers are Q ‐switching and gain switching [9]. Using passive mode locking, where gain and saturable absorber (SA) sections having the same epitaxial layer structure are placed side by side in the cavity [10], laser pulses with widths less than 10 ps can be directly realised by laser diodes with short cavity lengths [11–13]. The gain and SA sections are electrically isolated from each other and can thus be forward and reverse biased, respectively.…”

80 GHz AlGaInAs/InP colliding-pulse mode-locked laser with high pulse power

“…There are several approaches to increase the pulse power of SMLLs. [10][11][12][13][14][15][16] The first approach is to make SMLLs operating at λ < 1 µm to obtain a high pulse power, because SMLLs operating at a wavelength below 1 µm typically have a longer upper-state lifetime than those operating near 1.55 µm. 10) The long upper-state lifetime helps to generate a high pulse energy.…”

“…11) There are three methods to increase the saturation energy: increasing active region area A, [12][13][14] decreasing the optical confinement factor Γ, 15,16) and decreasing the differential modal gain dg=dn. 16) Based on these principles, various schemes have been carried out including tapered waveguides, 13) integrated tapered optical amplifiers, 14) slabcoupled optical waveguides (SCOWLs), 15) and decreasing the number of quantum wells. 16) However, it is difficult to achieve a high frequency and high pulse power simultaneously.…”

“…16) Based on these principles, various schemes have been carried out including tapered waveguides, 13) integrated tapered optical amplifiers, 14) slabcoupled optical waveguides (SCOWLs), 15) and decreasing the number of quantum wells. 16) However, it is difficult to achieve a high frequency and high pulse power simultaneously. For a fixed average output power, a higher repetition rate brings a correspondingly lower pulse energy.…”