Polarization characteristics of silicon photodiodes and their dependence on oxide thickness

Saito, T.; Hughey, L. R.; Proctor, James E.; O’Brian, Thomas R.

doi:10.1063/1.1147468

Cited by 11 publications

(8 citation statements)

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“…There is progressively greater absorption in the oxide as the wavelength decreases below about 160 nm, with the extinction coefficient reaching a maximum just short of 120 nm. It has also been observed [9][10][11] that at short wavelengths there appears to be charge transport from the oxide into the silicon, so the determination of quantum yield becomes much more complex.…”

Section: Quantum Yieldmentioning

confidence: 99%

Absolute silicon photodiodes for 160 nm to 254 nm photons

Canfield¹,

Vest²,

Korde³

et al. 1998

Metrologia

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Silicon n-on-p photodiodes with 100 % internal quantum efficiency have been studied in the 160 nm to 254 nm spectral range. Preliminary values have been determined for the quantum yield of silicon at these wavelengths. Using these values, a trap detector is presented for absolute flux measurement in this region. The stability under intense 193 nm irradiation, a property of importance in lithography and in photorefractive keratectomy, has been measured, and the diodes tested were found to be several orders of magnitude more stable than p-on-n diodes tested by other investigators at this wavelength. Spatial nonuniformities of the n-on-p diodes were found to be less than 1 % at wavelengths of 254 nm and 161 nm.

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Section: Quantum Yieldmentioning

confidence: 99%

Absolute silicon photodiodes for 160 nm to 254 nm photons

Canfield¹,

Vest²,

Korde³

et al. 1998

Metrologia

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“…With the advance of technologies for detector calibration, especially by cryogenic radiometers, the relative uncertainties achievable with primary standards are falling below even 10 -4 [1]. When such low-level uncertainties are considered for detector calibration and/or when an incident photon beam has a large angular divergence, as for irradiance meters, the detector response should change depending on the angular spread of the incident beam [2][3][4][5]. For example, the photodiode response for a collimated beam usually differs from the response for a divergent beam of the same power.…”

Section: Introductionmentioning

confidence: 99%

“…Recent studies show that difference in responses between the -and -polarizations, in other words, the polarization sensitivity, for a Si photodiode is largest in the wavelength range between 100 nm and 250 nm and is very sensitive to the thickness of the overlayer of silicon dioxide [2,3,5].…”

Section: Introductionmentioning

confidence: 99%

Difference in silicon photodiode response between collimated and divergent beams

Saito

Onuki

2000

Metrologia

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A theoretical model, whose validity was confirmed experimentally, has been used to investigate the polarization properties of silicon photodiodes as functions of the angle of incidence with wavelengths ranging from 10 nm to 800 nm. From this, spectral differences in the responses of silicon photodiodes between a collimated beam and a beam with angle divergence are derived. The calculation shows that divergent beams (both isotropic and Gaussian beams) usually give lower responses than those for a collimated beam except in a limited spectral region (approximately 120 nm to 220 nm for a Si photodiode coated with a SiO 2 layer of thickness 27 nm). The decrease in response of the Si photodiode with 27 nm SiO 2 for the isotropic divergent beam with half apex angle of the beam cone of 60 reaches a maximum of 14 % at a wavelength of 44 nm and the increase reaches a maximum of 7.5 % at 163 nm. Similar results for a Si photodiode coated with an 8 nm oxide layer and a divergent beam with Gaussian angular distribution were also obtained.

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“…We conducted a number of comparisons between the theoretical model and experiments covering most of the related characteristics like spectral dependence (Saito et al, 1989;1990) and angular/polarization dependence (Saito et al, 1995;1996a;1996b). To check more precisely, we have measured spectral responsivities of silicon photodiodes for both p-and spolarization components by using a Glan-laser prism before the detector, as a function of the angle of incidence (Saito, T. et al, 2010).…”

Section: Spectral Properties Of Photodiodesmentioning

confidence: 99%