Absolute silicon photodiodes for 160 nm to 254 nm photons

Abstract

Silicon n-on-p photodiodes with 100 % internal quantum efficiency have been studied in the 160 nm to 254 nm spectral range. Preliminary values have been determined for the quantum yield of silicon at these wavelengths. Using these values, a trap detector is presented for absolute flux measurement in this region. The stability under intense 193 nm irradiation, a property of importance in lithography and in photorefractive keratectomy, has been measured, and the diodes tested were found to be several orders of magnitude more stable than p-on-n diodes tested by other investigators at this wavelength. Spatial nonuniformities of the n-on-p diodes were found to be less than 1 % at wavelengths of 254 nm and 161 nm.

A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?

“…Recently, techniques, such as delta doping are proposed to make shallow junction. [24][25][26][27] The dead layer for mid-UV/far-UV absorption is still unavoidable. It was reported that the inversion-enhanced Si PN junction photodetector using fixed charges within oxide layer could alleviate the deadlayer problem, but the charges in oxide have stability issues.…”

Delta-doped electron-multiplied CCD with absolute quantum efficiency over 50% in the near to far ultraviolet range for single photon counting applications

“…At higher wavelengths or lower photon energies, the QY is approximately unity, and at wavelengths shorter than 360 nm 19 , this number is qualitatively proportional to the incident photon energies. This proportionality has been modeled and measured for higher photon energies including x-rays and has been reported for silicon by different groups as a constant number or as a function of incident photon energy [15,[19][20][21]. A detailed discussion can be found elsewhere [16,20,22].…”

Degradation assessment of LYRA after 5 years on orbit - Technology Demonstration -

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