Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures

Paladugu, Mohanchand; Zou, Jin; Guo, Yi; Zhang, Xin; Joyce, Hannah J.; Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati; Kim, Yong

doi:10.1063/1.3033551

Cited by 45 publications

(41 citation statements)

References 24 publications

(32 reference statements)

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“…For example, using a 2 ¼ 6:0583= ffiffiffi 3 pÅ for the InAs core and a 1 ¼ 5:6564= ffiffiffi 3 pÅ for the Al 0.53 In 0.47 P shell [27] gives L ¼ 4.9 nm, which is close to the measured value of L ¼ 4.7 nm. Similar Moiré fringes were observed in InAs-GaAs core-shell nanowires [28][29][30]. Moiré fringes were observed in all the AlInP samples, indicating strain relaxation.…”

Section: Resultssupporting

confidence: 74%

Facilitating growth of InAs–InP core–shell nanowires through the introduction of Al

Haapamaki¹,

Baugh²,

LaPierre³

2012

Journal of Crystal Growth

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a b s t r a c tInAs nanowires were grown on GaAs substrates by the Au-assisted vapour-liquid-solid (VLS) method in a gas source molecular beam epitaxy (GSMBE) system. Passivation of the InAs nanowires using InP shells proved difficult due to the tendency for the formation of axial rather than core-shell structures. To circumvent this issue, Al x In 1 À x As or Al x In 1 À x P shells with nominal Al composition fraction of x ¼ 0.20, 0.36, or 0.53 were grown by direct vapour-solid deposition on the sidewalls of the InAs nanowires. Characterisation by transmission electron microscopy revealed that the addition of Al in the shell resulted in a remarkable transition from the VLS to the vapour-solid growth mode with uniform shell thickness along the nanowire length. Possible mechanisms for this transition include reduced adatom diffusion, a phase change of the Au seed particle, and surfactant effects. The InAs-AlInP coreshell nanowires exhibited misfit dislocations, while the InAs-AlInAs nanowires with lower strain appeared to be free of dislocations.

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Section: Resultssupporting

confidence: 74%

Facilitating growth of InAs–InP core–shell nanowires through the introduction of Al

Haapamaki¹,

Baugh²,

LaPierre³

2012

Journal of Crystal Growth

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“…One example is the asymmetric radial growth of InAs ''ribbons'' on the three alternate {1 1 2}A faces of GaAs cores [69]. This occurs because the three {1 1 2}A faces have a faster growth rate than the {1 1 2}B faces.…”

Section: Radial Nanowire Heterostructuresmentioning

confidence: 98%

III–V semiconductor nanowires for optoelectronic device applications

Joyce

Gao

Tan

et al. 2011

Progress in Quantum Electronics

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269

217

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“…Group IV [37][38][39][40][41][42] are motivated by the predicted enhanced performance of nanophotonic and nanoelectronic devices [43], while II-VI compounds like CdSe and ZnTe [44] are ideal for achieving high optical performance together with energy harvesting ability. Finally III-V semiconductor based CSNWs [45][46][47][48][49] have been explored as enhanced light-emitting and laser diodes [50,51] photovoltaics [52] and high-current battery electrodes [53]. The WZ CSNW system with an epitaxial interface provides e.g.…”

Section: Core Shell Nanowiresmentioning

confidence: 99%

Piezoelectric field enhancement in III–V core–shell nanowires

et al. 2015

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Linear and quadratic piezoelectric coefficients of wurtzite III-V (GaP, InP, GaAs and InAs) semiconductors are calculated using ab-initio density functional theory. We show that the predicted magnitude of such coefficients is much larger than previously reported and of the same order of magnitude as those of III-N semiconductors. In order to show the applicability of wurtzite III-V semiconductors as piezoelectric materials, we model the bending distortion created on a nanowire by an atomic force microscope tip. We calculate the dependence of the piezoelectric properties of both homogeneous and core shell wurtzite III-V semiconductor structures on the induced deflection. We show that a number of combinations of III-V materials for the core and the shell of the nanowires can favor much increased voltage generation. We observe the largest core voltages in core/shell combinations of InAs/GaP, InP/GaP, GaP/InAs and GaP/InP which are predicted to be 3 orders of magnitude larger than the typical values of 73 V in homogeneous nanowires. Also considering properties such as voltage generation, bandgap discontinuity and mobility, III-V wurtzite core-shell nanowires are candidates for high performance components in piezotronics and nanogeneration.

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Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures

Abstract: The influence of the droplet composition on the vapor-liquid-solid growth of InAs nanowires on GaAs ( 1 ¯ 1 1 ¯ ) B by metal-organic vapor phase epitaxy

Cited by 45 publications

References 24 publications

Facilitating growth of InAs–InP core–shell nanowires through the introduction of Al

Facilitating growth of InAs–InP core–shell nanowires through the introduction of Al

III–V semiconductor nanowires for optoelectronic device applications

Piezoelectric field enhancement in III–V core–shell nanowires

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