Polarities of GaN films and 3C-SiC intermediate layers grown on (111) Si substrates by MOVPE

Komiyama, Jun; Suzuki, Shunichi; Nakanishi, Hideo

doi:10.1016/j.jcrysgro.2006.10.022

Cited by 16 publications

(22 citation statements)

References 24 publications

(43 reference statements)

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“…2͑a͒ and 2͑b͒. 17,18 Most of the GaN NRs keep an epitaxial relationship with the Si substrate. However, some of the NRs present a certain tilt with respect to the normal direction, as indicated by the presence of faint arcs around the ͑0002͒ and ͑2110͒ main spots in Figs.…”

Section: A Nucleation Of Undoped Nanorodsmentioning

confidence: 99%

Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping

Furtmayr

Vielemeyer

Stutzmann

et al. 2008

Journal of Applied Physics

141

151

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The self-assembled growth of GaN nanorods on Si ͑111͒ substrates by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions is investigated. An amorphous silicon nitride layer is formed in the initial stage of growth that prevents the formation of a GaN wetting layer. The nucleation time was found to be strongly influenced by the substrate temperature and was more than 30 min for the applied growth conditions. The observed tapering and reduced length of silicon-doped nanorods is explained by enhanced nucleation on nonpolar facets and proves Ga-adatom diffusion on nanorod sidewalls as one contribution to the axial growth. The presence of Mg leads to an increased radial growth rate with a simultaneous decrease of the nanorod length and reduces the nucleation time for high Mg concentrations.

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Section: A Nucleation Of Undoped Nanorodsmentioning

confidence: 99%

Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping

Furtmayr

Vielemeyer

Stutzmann

et al. 2008

Journal of Applied Physics

141

151

View full text Add to dashboard Cite

show abstract

“…In addition, part of our group reported that H 2 adsorbed on the surface of Si substrates prevents the direct growth of GaN on Si by MOVPE [21,22]. The crystal structure of 3C-SiC (111) with Si polarity, the polarity identical to our SiC on Si template, and Si (111) is analogous [11]. Hence, H 2 adsorbed on the surface of SiC may prevent the direct growth of GaN on SiC.…”

Section: Introductionmentioning

confidence: 75%

“…An intermediate layer, also called as a buffer layer, that reduces the stress in the heteroepitaxy of GaN on Si is needed. In the previous paper, we have reported the stress reduction in GaN on Si using cubic SiC (3C-SiC) intermediate layers [9][10][11]. The (111)-oriented 3C-SiC has a lattice structure close to that of GaN (0 0 0 1)-the basal plane of hexagonal GaN.…”

Section: Introductionmentioning

confidence: 99%

“…The lattice mismatch between GaN (0 0 0 1) and 3C-SiC (111) is 3%, which is much smaller than that between GaN and Si (17%). Stress reduction is considered by employing 3C-SiC as the intermediate layers between GaN and Si [9][10][11]. Our previous works and the conventional growth of GaN on SiC by metalorganic vapor phase epitaxy (MOVPE) used AlN or AlGaN buffer layers (AlN buffers) to obtain GaN with a smooth surface [9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

“…Stress reduction is considered by employing 3C-SiC as the intermediate layers between GaN and Si [9][10][11]. Our previous works and the conventional growth of GaN on SiC by metalorganic vapor phase epitaxy (MOVPE) used AlN or AlGaN buffer layers (AlN buffers) to obtain GaN with a smooth surface [9][10][11][12][13][14]. The growth of GaN on SiC by MOVPE without using AlN buffers, that is the direct growth of GaN on SiC, resulted in GaN with a rough surface due to the poor nucleation of GaN on SiC [15,16].…”

Section: Introductionmentioning

confidence: 99%

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