MOVPE of AlN-free hexagonal GaN/cubic SiC/Si heterostructures for vertical devices

Komiyama, Jun; Suzuki, Shunichi; Nakanishi, Hideo; Koukitu, Akinori

doi:10.1016/j.jcrysgro.2009.01.025

Cited by 12 publications

(7 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To solve the above-mentioned problems, many researchers have studied several methods, such as the use of superlattices for strain control, a low-temperature AlN seed layer, an InAlN buffer layer for decreasing the lattice mismatch, or a SiN x interlayer between AlN and GaN, and GaN growth on a SiC buffer layer on a Si substrate. 4,[7][8][9][10][11] Among these methods, we focused on the use of a 3C-SiC buffer layer. [12][13][14] Using a stable intermediate layer on a Si substrate, we can prevent a melt back reaction and formed a SiN x layer through a stable interface and low lattice mismatch (3%), which is much smaller than that of the Si substrate (17%).…”

Section: Introductionmentioning

confidence: 99%

MOVPE growth of GaN on Si substrate with 3C-SiC buffer layer

Katagiri

Fang

Miyake

et al. 2014

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

We investigated the effect of the thickness of a 3C-SiC buffer layer on the growth of GaN on a Si substrate. GaN samples with thicknesses of 2.0 and 4.5 µm were grown by metal organic vapor phase epitaxy. Islands were observed at the initial growth of the GaN samples, and they became larger and then coalesced with each other with increasing growth time. The crystalline quality of the GaN samples was affected by the thickness of the 3C-SiC buffer layer and was improved by increasing their thickness. This indicates that the crystalline quality trend for thick GaN growth is different from that for initial GaN growth. Moreover, the GaN sample with a 100-nm-thick SiC buffer layer had a low initial curvature, and the crystalline qualities on GaN(0004) and ð1012Þ planes were 389 and 460 arcsec for 4.5-µm-thick GaN growth, respectively.

show abstract

Section: Introductionmentioning

confidence: 99%

MOVPE growth of GaN on Si substrate with 3C-SiC buffer layer

Katagiri

Fang

Miyake

et al. 2014

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…With its unique physical, chemical, electrical and mechanical properties, SiC is widely used in fabrication of next-generation electronic devices and microelectromechanical systems (MEMS) [1][2][3][4], and also potentially employed as a substrate or buffer layer in the growth of AlN, GaN and as template for the preparation of graphene layers [5][6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000 °C

et al. 2011

View full text Add to dashboard Cite

To lower deposition temperature and reduce thermal mismatch induced stress, heteroepitaxial growth of single-crystalline 3C-SiC on 150 mm Si wafers was investigated at 1000 o C using alternating supply epitaxy. The growth was performed in a hot-wall low-pressure chemical vapour deposition reactor, with silane and acetylene being employed as precursors. To avoid contamination of Si substrate, the reactor was filled in with oxygen to grow silicon dioxide, and then this thin oxide layer was etched away by silane, followed by a carbonization step performed at 750 o C before the temperature was ramped up to 1000 o C to start the growth of SiC. Microstructure analyses demonstrated that single-crystalline 3C-SiC is epitaxially grown on Si substrate and the film quality is improved as thickness increases. The growth rate varied from 0.44 to 0.76 ± 0.02 nm/cycle by adjusting the supply volume of SiH 4 and C 2 H 2. The thickness nonuniformity across wafer was controlled with ± 1 %. For a prime

show abstract

“…Al x Ga 1 − x N ultraviolet avalanche photodiodes were grown on GaN substrates; results show that the avalanche gain is due to the low dislocation density in the bulk of GaN substrates [33]. Moreover, heterostructures of GaN with IV compounds have been studied, either theoretically or experimentally, and they are found to be stable [34][35][36][37]. Recently, electronic structure, charge transfer, and optical properties of GaN-GeC van der Waals heterostructures have been investigated using first-principle calculations; results suggest optical absorption in the visible region, which indicates that this is a promising material for photocatalytic applications [38].…”

Section: Introductionmentioning

confidence: 99%

Zinc-Blende GeC Stabilized on GaN (001): An Ab Initio Study

Camacho-García

Ruiz-Peralta

Hernández-Cocoletzi

et al. 2022

Advances in Condensed Matter Physics

View full text Add to dashboard Cite

First-principle calculations have been performed to explore the initial stages of the zinc blende-like germanium carbide epitaxial growth on the gallium nitride (001)-(2 × 2) surface. First, we studied the Ge/C monolayer adsorption and incorporation at high symmetry sites. Results show that the adsorptions at the top and hcp1 sites are the most stable structures of C and Ge, respectively. Different terminated surfaces were used on the GeC epitaxial growth. According to the surface formation energies, only the first two bilayers are stable; therefore, the GeC epitaxial growth is favorable only under N-rich conditions on a Ge-terminated surface and with Ge bilayers terminated. In addition, it is demonstrated that GeC bilayers on the C-terminated surfaces are unstable and preclude the epitaxial growth. Electronic properties have been investigated by calculating the density of states (DOS) and the projected density of states (PDOS) of the most favorable structures.

show abstract

MOVPE of AlN-free hexagonal GaN/cubic SiC/Si heterostructures for vertical devices

Cited by 12 publications

References 22 publications

MOVPE growth of GaN on Si substrate with 3C-SiC buffer layer

MOVPE growth of GaN on Si substrate with 3C-SiC buffer layer

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000 °C

Zinc-Blende GeC Stabilized on GaN (001): An Ab Initio Study

Contact Info

Product

Resources

About