Platinum etching in Ar/Cl2 plasmas with a photoresist mask

Abstract

Articles you may be interested inEffect of high-frequency variation on the etch characteristics of ArF photoresist and silicon nitride layers in dual frequency superimposed capacitively coupled plasmaa) Polysilicon gate etching in high density plasmas. V. Comparison between quantitative chemical analysis of photoresist and oxide masked polysilicon gates etched in HBr/Cl2/O2 plasmas J.Experimental studies of the etching of platinum have been performed with a photoresist mask in Ar/Cl 2 plasmas. The etch rate of platinum decreased with addition of Cl 2 , showing no enhancement of etching by Cl 2 addition. Moreover, the etch rate of platinum was found to be independent of substrate temperature in pure Cl 2 plasmas. These results indicated that the platinum etching with chlorine-containing plasmas is proceeded mainly by physical sputtering due to incident ions, not by chemical reactions that produce volatile etch products. Thus, in platinum etching with Ar/Cl 2 plasmas, the redeposition of nonvolatile etch products was observed to occur on sidewalls of the photoresist mask and platinum pattern; in this situation the etched profiles of platinum were tapered outwardly, because the redeposited films acted as etching masks for platinum. The thickness of deposited films on sidewalls increased with increasing Cl 2 concentration, but they were found to be removed by wet treatment with HCl solutions. It was further demonstrated that by optimizing the Cl 2 concentration, platinum could be etched without redeposition residues on sidewalls, although the etched profiles still remained outwardly tapered.

High Piezoelectric Longitudinal Coefficients in Sol–gel PZT Thin Film Multilayers

“…In all the etching processes, AZ 1512 photoresist was employed to protect the unetched areas. A dry etching process with Cl 2 and Ar gases (fluxes ratio 1/2) was used employing an STS Multiplex ICP dry etcher for etching Pt layers (Imperial Park, Newport, UK). PZT was wet etched in a solution of hydrochloric acid, hydrofluoridric acid and water at 50°C, with the following volume proportions: HCl (40%):H 2 O:HF = 50:50:0.5.…”

Wafer–to–wafer transfer process of barium strontium titanate for frequency tuning applications using laser pre-irradiation

“…This problem would happen if the delamination interface was Pt (1) //sapphire, i.e. Pt (1) was left on the transferred BST film, because the BST side wall would be contaminated with metal debris during the ion milling of the metal layers [25][26][27].…”

Patterning of platinum (Pt) thin films by chemical wet etching in Aqua Regia

“…These sought-after properties also make Pt inherently difficult to pattern. The method of choice for patterning fine Pt structures is dry etching with halide-argon based [2][3][4][5][6][7][8][9] or alternatively fluorine-argon based gas mixtures [10][11][12]. Ion milling/sputter etching with just Ar can also be used but is not selective to other materials and finding a suitable masking material is difficult [13][14][15].…”