Plastic behavior of 4H-SiC single crystals deformed at low strain rates

Demenet, J. L.; Hong, Moon-Hi; Pirouz, P.

doi:10.1016/s1359-6462(00)00495-4

Cited by 54 publications

(35 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The OEM experiments also show that the activation energy for partial glide motion under forward bias is as low as 0.27 eV ͑Ref. 6͒ and substantially lower than the estimated value of 2.5 eV obtained from the temperature dependence of the yield stress 15 or the brittle-to-ductile transition temperature. 6,16 This has been interpreted as evidence for a REDG mechanism and preliminary data suggest a nonradiative recombination center at ϳ2.2 eV located at or near the core of a mobile Shockley partial.…”

Section: Introductionmentioning

confidence: 57%

Structure and motion of basal dislocations in silicon carbide

et al. 2003

View full text Add to dashboard Cite

30°and 90°Shockley partial dislocations lying in ͕111͖ and basal planes of cubic and hexagonal silicon carbide, respectively, are investigated theoretically. Density-functional-based tight-binding total-energy calculations are used to determine the core structure and energetics of the dislocations. In a second step their electronic structure is investigated using a pseudopotential method with a Gaussian basis set. Finally, the thermal activation barriers to glide motion of 30°and 90°Shockley partials are calculated in terms of a process involving the formation and migration of kinks along the dislocation line. The mechanism for enhanced dislocation movement observed under current injection conditions in bipolar silicon carbide devices is discussed.

show abstract

Section: Introductionmentioning

confidence: 57%

Structure and motion of basal dislocations in silicon carbide

et al. 2003

View full text Add to dashboard Cite

show abstract

“…(b) Evolution of the logarithm of CRSS vs the reciprocal of the absolute temperature. Data from Samant et al [8] and Demenet et al [9] (circles and crosses respectively) are compared with this work (squares).…”

mentioning

confidence: 96%

“…Demenet et al [9] have performed similar compression tests, on single 4H-SiC crystals at temperatures ranging from 900 °C to 1360 °C with a strain rate of 3.6×10 -5 s -1 . These two data sets are added to the previous plot for comparison with the present study (Fig.…”

mentioning

confidence: 99%

Plasticity and deformation microstructure of 4H‐SiC below the brittle‐to‐ductile transition

Mussi

Rabier

Thilly

et al. 2007

Phys. Status Solidi (c)

View full text Add to dashboard Cite

Compression tests under confining pressure are performed with a Paterson press in order to deform 4H-SiC plastically below the brittle-to-ductile transition temperature. Deformation microstructure in this regime is analysed using conventional and high resolution transmission electron microscopy and is compared with literature. Leading partial dislocations with carbon core and silicon core are observed on basal plane as well as perfect dislocations out of the basal plane. Double stacking faults are evidenced in the deformed microstructure. These original observations indicate that the deformation microstructures of 4H-SiC in the brittle domain are more complex than previously reported.

show abstract

“…This results from some type of stress applied to the crystal. Deformation experiments on 4H-SiC (as well as 6H-SiC) have shown that glide of dislocations is practically impossible at stresses below tens of megaPascals and temperatures lower than hundreds of degrees Celsius (9,(17)(18)(19). On the other hand, in SiC PiN diodes, the only existing stress in the active layer of the device is of the order of kilopascals from the small lattice mismatch between high-low doped p + and n -or n + andn -layers.…”

Section: Motion Of Perfect and Partial Dislocations And Expansion Of mentioning

confidence: 99%

(Invited) Degradation of SiC Bipolar Devices: A Review of Likely Causes and Recent Advances in its Understanding

Pirouz

Galeckas

2011

ECS Trans.

View full text Add to dashboard Cite

Degradation of 4H-SiC PiN diodes -a rapid increase in the forward voltage drop with operation time -has been a focus of research since it was observed a decade ago. A combination of electrical studies and microstructural characterization of the diodes revealed early on that associated with this degradation is a rapid increase in the number and extent of intrinsic stacking faults in the active region of the device. Because PiN diode is a bipolar device, and the degradation occurs under forward biasing, it was suspected that the expansion of stacking faults is driven by injection of electron-hole pairs (ehps). In many ways, this effect is similar to a phenomenon known as recombination-induced dislocation glide (REDG) that occurs in some other semiconductors, including in SiC. In this paper, after a review of the basic materials science issues regarding extended defects in SiC, recent explanations of degradation of PIN diodes are discussed.

show abstract

Plastic behavior of 4H-SiC single crystals deformed at low strain rates

Cited by 54 publications

References 15 publications

Structure and motion of basal dislocations in silicon carbide

Structure and motion of basal dislocations in silicon carbide

Plasticity and deformation microstructure of 4H‐SiC below the brittle‐to‐ductile transition

(Invited) Degradation of SiC Bipolar Devices: A Review of Likely Causes and Recent Advances in its Understanding

Contact Info

Product

Resources

About