Plasmonic enhancement of photocurrent in GaN based UV photodetectors

Shetty, Arjun; Sundar, Kamal John; Roul, Basanta; Mukundan, Shruti; Chandan, Greeshma; Mohan, L. R. Ram; Ghosh, Ambarish; Vinoy, K. J.; Krupanidhi, S. B.

doi:10.1109/icemelec.2014.7151138

Cited by 10 publications

(7 citation statements)

References 11 publications

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“…2,27 This increases the density of carriers in the conduction band of the heterojunction device and reflected as improved photocurrent as well as an enhanced performance of the developed UV detection device. Some previous reports were also found to be in coherence with the fact that the use of NP's nanoplasmonics such as platinum (Pt) NPs, 20 aluminum (Al) NPs, 21 silver (Ag) NPs, 19 and gold (Au) NPs 22 has been realized to obtain a solution for the carrier enhancement seeker of GaN-based UV-PDs. Among them, the utilization of Au-NPs has proven to be noteworthy in LSPR due to their advantageous inherent physical properties such as high physiochemical stability, nonlinear optics, magnetoplasmonic properties, optically active, 28 and the ease of surface functionalization with plasmon-oriented multitude of optical properties.…”

Section: Introductionmentioning

confidence: 64%

GaN Nanotowers Grown on Si (111) and Functionalized with Au Nanoparticles and ZnO Nanorods for Highly Responsive UV Photodetectors

Goswami

Aggarwal

Singh

et al. 2020

ACS Appl. Nano Mater.

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Vertically aligned GaN nanotowers (NTs) were grown on the Si (111) substrate by plasma-assisted molecular beam epitaxy to design a highly responsive ultraviolet (UV) photodetector. The UV detector fabricated on a bare GaN-NT array yielded highly sensitive and repeatable device characteristics attributed by high responsivity (R), low noise equivalent power (NEP), and a high external quantum efficiency (EQE) of 484.77 A/W, 1.76 × 10 −13 W.Hz -1/2 , and 1.85 × 10 5 %, respectively. Furthermore, the developed UV photodetector demonstrated fast response with excellent stability when functionalized with Au nanoparticles and ZnO nanorods. This hybridized GaN-NT-based device with ZnO nanorods and Au nanoparticles significantly accelerated the performance of the device where a prominent threeorder reduction under dark current is observed along with gigantic R, lower NEP, and an extremely enhanced EQE of 7042 A/W, 1.84 × 10 −14 W.Hz -1/2 , and 2.7 × 10 6 %, respectively. The mechanism elaborating the enhanced device performance with a localized surface plasmon effect has been discussed through an energy band diagram. The fabricated highly sensitive device can lead the path toward future optoelectronic applications of integrated III-nitride technology.

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Section: Introductionmentioning

confidence: 64%

GaN Nanotowers Grown on Si (111) and Functionalized with Au Nanoparticles and ZnO Nanorods for Highly Responsive UV Photodetectors

Goswami

Aggarwal

Singh

et al. 2020

ACS Appl. Nano Mater.

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“…The interaction between the electromagnetic wave and free electrons in the metal is known as surface plasmon resonance (SPR), in which the light (electromagnetic wave) excites free electrons in the metal to achieve selected absorption or reflection, producing an enhancement in light intensity and trapping electromagnetic energy in deep subwavelength volume, area or length [ 74 , 75 , 76 ]. Studies showed that modification of the detection area with nanostructures or nanoparticles contributed to the improved performances in the photodetector.…”

Section: Plasmonic Implementation In Photodetectormentioning

confidence: 99%

MoS2/h-BN/Graphene Heterostructure and Plasmonic Effect for Self-Powering Photodetector: A Review

et al. 2021

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A photodetector converts optical signals to detectable electrical signals. Lately, self-powered photodetectors have been widely studied because of their advantages in device miniaturization and low power consumption, which make them preferable in various applications, especially those related to green technology and flexible electronics. Since self-powered photodetectors do not have an external power supply at zero bias, it is important to ensure that the built-in potential in the device produces a sufficiently thick depletion region that efficiently sweeps the carriers across the junction, resulting in detectable electrical signals even at very low-optical power signals. Therefore, two-dimensional (2D) materials are explored as an alternative to silicon-based active regions in the photodetector. In addition, plasmonic effects coupled with self-powered photodetectors will further enhance light absorption and scattering, which contribute to the improvement of the device’s photocurrent generation. Hence, this review focuses on the employment of 2D materials such as graphene and molybdenum disulfide (MoS2) with the insertion of hexagonal boron nitride (h-BN) and plasmonic nanoparticles. All these approaches have shown performance improvement of photodetectors for self-powering applications. A comprehensive analysis encompassing 2D material characterization, theoretical and numerical modelling, device physics, fabrication and characterization of photodetectors with graphene/MoS2 and graphene/h-BN/MoS2 heterostructures with plasmonic effect is presented with potential leads to new research opportunities.

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“…This enhancement occurs because when the photons excite LSPs on the surfaces of the Al nanoparticles, these LSPs recombine and generate photons with stronger intensities. For the non-LED device, Shetty et al 236 investigated the ability of plasmonic nanostructures to improve the performance of UV-PD. Incident UV light on the PD excites LSPs on the surface of Al nanostructures.…”

Section: Plasmonic Nanostructuresmentioning

confidence: 99%

Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices

et al. 2018

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Group III-nitride semiconductor materials especially AlGaN are key-emerging candidates for the advancement of ultraviolet (UV) photonic devices. Numerous nanophotonics approaches using nanostructures (e.g., nanowires, nanorods, and quantum dots/disks) and nanofabrication (e.g., substrate patterning, photonic crystals, nanogratings, and surface-plasmons) have been demonstrated to address the material growth challenges and to enhance the device efficiencies of photonic devices operating at UV wavelengths. Here, we review the progress of nanophotonics implementations using nanostructured interfaces and nanofabrication approaches for the group III-nitride semiconductors to realize efficient UV-based photonic devices. The existing challenges of nanophotonics applications are presented. This review aims to provide analysis of state-of-the-art nanophotonic approaches in advancing the UV-photonic devices based on group III-nitride semiconductors. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Plasmonic enhancement of photocurrent in GaN based UV photodetectors

Cited by 10 publications

References 11 publications

GaN Nanotowers Grown on Si (111) and Functionalized with Au Nanoparticles and ZnO Nanorods for Highly Responsive UV Photodetectors

GaN Nanotowers Grown on Si (111) and Functionalized with Au Nanoparticles and ZnO Nanorods for Highly Responsive UV Photodetectors

MoS2/h-BN/Graphene Heterostructure and Plasmonic Effect for Self-Powering Photodetector: A Review

Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices

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