Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices

Abstract

Group III-nitride semiconductor materials especially AlGaN are key-emerging candidates for the advancement of ultraviolet (UV) photonic devices. Numerous nanophotonics approaches using nanostructures (e.g., nanowires, nanorods, and quantum dots/disks) and nanofabrication (e.g., substrate patterning, photonic crystals, nanogratings, and surface-plasmons) have been demonstrated to address the material growth challenges and to enhance the device efficiencies of photonic devices operating at UV wavelengths. Here, we review the progress of nanophotonics implementations using nanostructured interfaces and nanofabrication approaches for the group III-nitride semiconductors to realize efficient UV-based photonic devices. The existing challenges of nanophotonics applications are presented. This review aims to provide analysis of state-of-the-art nanophotonic approaches in advancing the UV-photonic devices based on group III-nitride semiconductors. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

Enhanced Optical Output of Near-Ultraviolet Light-Emitting Diodes by a Monolayer of Nanospheres

“…Near-ultraviolet (NUV) light-emitting diodes (LEDs) have been used in various applications such as biological agent identification, ultraviolet curing, fake bill detection, and solid-state lighting [1][2][3]. Although gallium nitride-(GaN-) based NUV LEDs are now being produced commercially, their capacities still need to be improved.…”

Displacement Talbot lithography for nano-engineering of III-nitride materials

“…In addition, the relatively large refractive index of III-nitride materials seriously limits the amount of light that can be extracted from the LED as the majority of photons will be trapped within the structure by total internal reflection. Nanostructuring these materials not only offers a route to improve the crystal quality and increase the light extraction 6,7 , but also provides an opportunity for further control of the overall device optoelectronic properties (e.g. wavelength range, lasing, doping) 8,9 , enabling novel functionalities and applications such as piezoelectric nanogenerators 10 , solar light harvesting 11 , water splitting 12 , single photon sources 13 , or intersubband devices 14 .…”

Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates

“…III-Nitride semiconductor compounds consist of the combination of group III elements such as Ga (gallium), In (indium), Al (aluminum) with N (nitrogen). They can be used widely in electronics [1][2][3] and optoelectronics [4][5][6] applications. In recent years new application areas of III-Nitride semiconductors have emerged especially for the UV (ultraviolet) radiation of the electromagnetic spectrum because of their superior advantages such as wide and direct band gap, high thermal stability, high breakdown field etc.…”

“…In recent years new application areas of III-Nitride semiconductors have emerged especially for the UV (ultraviolet) radiation of the electromagnetic spectrum because of their superior advantages such as wide and direct band gap, high thermal stability, high breakdown field etc. [5]. The market forecast for UV-LEDs (light emitting diodes) is increasing from $90 million in the year 2014 to $800 million by the year 2020 due to the increasing demands in epoxy curing, water purification, food or medical sterilization, and many new emerging applications [5].…”

“…[5]. The market forecast for UV-LEDs (light emitting diodes) is increasing from $90 million in the year 2014 to $800 million by the year 2020 due to the increasing demands in epoxy curing, water purification, food or medical sterilization, and many new emerging applications [5]. UV radiation can be divided into three regions, comprising the UV-A region (320-400 nm), the UV-B region (280-320 nm), and the UV-C region (100-280 nm) [7].…”