Plasmonic enhanced silicon pyramids for internal photoemission Schottky detectors in the near-infrared regime

Desiatov, Boris; Goykhman, Ilya; Mazurski, Noa; Shappir, J.; Khurgin, Jacob B.; Levy, Uriel

doi:10.1364/optica.2.000335

Cited by 117 publications

(97 citation statements)

References 29 publications

(32 reference statements)

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“…The bandwidth can also be broadened by integrating multiple resonators [48]. Pyramid nanostructures [90] have also been shown to enhance the photoresponsivity of hot electron detectors ( Figure 2D). In this device, the silicon pyramids perform as efficient and broadband light concentrators, focusing the light from a large area into a small active pixel area where the hot electrons are generated.…”

Section: Free-space Photodetectorsmentioning

confidence: 99%

“…This involves both the judicious design of plasmonic nanostructures and a better fundamental understanding of the hot carrier generation, transport, and extraction processes. In terms of plasmonic design, ways to further enhance the field concentration and absorption in ultrathin or small nanoparticles is needed [44,48,90,150]. In terms of hot carrier transport, employing higher-quality noble metals [151,152] …”

Section: Future Developments and Perspectivesmentioning

confidence: 99%

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Harvesting the loss: surface plasmon-based hot electron photodetection

2016

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Abstract:Although the nonradiative decay of surface plasmons was once thought to be only a parasitic process within the plasmonic and metamaterial communities, hot carriers generated from nonradiative plasmon decay offer new opportunities for harnessing absorption loss. Hot carriers can be harnessed for applications ranging from chemical catalysis, photothermal heating, photovoltaics, and photodetection. Here, we present a review on the recent developments concerning photodetection based on hot electrons. The basic principles and recent progress on hot electron photodetectors are summarized. The challenges and potential future directions are also discussed.

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Section: Free-space Photodetectorsmentioning

confidence: 99%

Section: Future Developments and Perspectivesmentioning

confidence: 99%

Harvesting the loss: surface plasmon-based hot electron photodetection

2016

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“…No saturation is observable. In particular, a positive photocurrent of I p 38 μA is measured for an optical input power of 310 μW and a bias voltage of U 3.25 V. This corresponds to a sensitivity of S 0.12 A∕W, which is more than a factor of 6 higher than the sensitivity other IPE-based photodetectors [13,16]. Furthermore, the sensitivity is of the same order of magnitude as values typically measured for comparable state-of-the-art waveguide-based SiGe devices [18][19][20].…”

Section: Research Articlementioning

confidence: 95%

“…Propagation of surface plasmon polaritons (SPPs) in plasmonic waveguides is ideally suited for realizing such devices, as the plasmonic mode is strongly localized at the MS interface and, hence, perfectly concentrates the light to the region where absorption leads to the highest generation rate of photo-electrons. The potential of IPE has been demonstrated in several different plasmonic devices, including resonant plasmonic antennas or nanocavities [11][12][13] and metal-coated silicon waveguides [14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Silicon-plasmonic internal-photoemission detector for 40 Gbit/s data reception

Muehlbrandt

Melikyan

Harter

et al. 2016

Optica

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Silicon-plasmonics enables the fabrication of active photonic circuits in CMOS technology with unprecedented operation speed and integration density. Regarding applications in chip-level optical interconnects, fast and efficient plasmonic photodetectors with ultrasmall footprints are of special interest. A particularly promising approach to silicon-plasmonic photodetection is based on internal photoemission (IPE), which exploits intrinsic absorption in plasmonic waveguides at the metal-dielectric interface. However, while IPE plasmonic photodetectors have already been demonstrated, their performance is still far below that of conventional high-speed photodiodes. In this paper, we demonstrate a novel class of IPE devices with performance parameters comparable to those of state-of-the-art photodiodes while maintaining footprints below 1 μm 2 . The structures are based on asymmetric metal-semiconductormetal waveguides with a width of less than 75 nm. We measure record-high sensitivities of up to 0.12 A/W at a wavelength of 1550 nm. The detectors exhibit opto-electronic bandwidths of at least 40 GHz. We demonstrate reception of on-off keying data at rates of 40 Gbit/s.

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“…The possibility of photoemission through the near-IR plasmonic excitation has been discussed and experimentally demonstrated [34,[37][38][39][40][41][42][43][44][45][46], proving the existence of different ways to extend the spectral response of a photovoltaic device. However, in most cases, the costly and CMOS-incompatible electron-beam lithography is used.…”

Section: Introductionmentioning

confidence: 99%

Broadband infrared absorption enhancement by electroless-deposited silver nanoparticles

Gritti¹,

Raza²,

Kadkhodazadeh³

et al. 2016

Nanophotonics

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Decorating semiconductor surfaces with plasmonic nanoparticles (NPs) is considered a viable solution for enhancing the absorptive properties of photovoltaic and photodetecting devices. We propose to deposit silver NPs on top of a semiconductor wafer by a cheap and fast electroless plating technique. Optical characterization confirms that the random array of electroless-deposited NPs improves absorption by up to 20% in a broadband of nearinfrared frequencies from the bandgap edge to 2000 nm. Due to the small filling fraction of particles, the reflection in the visible range is practically unchanged, which points to the possible applications of such deposition method for harvesting photons in nanophotonics and photovoltaics. The broadband absorption is a consequence of the resonant behavior of particles with different shapes and sizes, which strongly localize the incident light at the interface of a high-index semiconductor substrate. Our hypothesis is substantiated by examining the plasmonic response of the electroless-deposited NPs using both electron energy loss spectroscopy and numerical calculations.

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Plasmonic enhanced silicon pyramids for internal photoemission Schottky detectors in the near-infrared regime

Cited by 117 publications

References 29 publications

Harvesting the loss: surface plasmon-based hot electron photodetection

Harvesting the loss: surface plasmon-based hot electron photodetection

Silicon-plasmonic internal-photoemission detector for 40 Gbit/s data reception

Broadband infrared absorption enhancement by electroless-deposited silver nanoparticles

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